Measurement of surface Fermi level in phosphidized GaAs

Measurement of surface Fermi level in phosphidized GaAs

The location of the surface Fermi level in phosphidized GaAs has been investigated using the Kelvin probe method. The surface Fermi level changes from an energy around 0.47 eV below the conduction band edge for the as-etched surface covered with a natural oxide layer to an energy of 0.25 eV after su...

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Veröffentlicht in:Japanese Journal of Applied Physics 1992-11, Vol.31 (11A), p.L1522-L1524
Hauptverfasser: SUGINO, T, YAMADA, T, KONDO, K, NINOMIYA, H, MATSUDA, K, SHIRAFUJI, J
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Sprache:eng
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Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron states
Exact sciences and technology
Fermi surface: calculations and measurements
effective mass, g factor
Physics
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container_end_page L1524
container_issue 11A
container_start_page L1522
container_title Japanese Journal of Applied Physics
container_volume 31
creator SUGINO, T
YAMADA, T
KONDO, K
NINOMIYA, H
MATSUDA, K
SHIRAFUJI, J
description The location of the surface Fermi level in phosphidized GaAs has been investigated using the Kelvin probe method. The surface Fermi level changes from an energy around 0.47 eV below the conduction band edge for the as-etched surface covered with a natural oxide layer to an energy of 0.25 eV after sufficient phosphidization by phosphine (PH 3 )-plasma treatment. On the other hand, isothermal capacitance transient spectroscopy measurement reveals that a new electron trap with an activation energy of 0.24 eV is introduced at or near the phosphidized surface. This provides experimental evidence that the location of the surface Fermi level is closely associated with that of the electron trap induced by PH 3 -plasma treatment.
doi_str_mv 10.1143/jjap.31.l1522
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source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
subjects Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron states
Exact sciences and technology
Fermi surface: calculations and measurements
effective mass, g factor
Physics
title Measurement of surface Fermi level in phosphidized GaAs
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