Low temperature GaAs grown by gas source molecular beam epitaxy
Low temperature growth of GaAs by gas source molecular beam epitaxy (GSMBE) is investigated. Reflection high energy electron diffraction is used to monitor the low temperature buffer (LTB) growth and anneal conditions. Growth at low temperatures with dimeric arsenic is more sensitive to the V/III fl...
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| Veröffentlicht in: | Journal of crystal growth 1992-05, Vol.120 (1), p.200-205 |
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| container_issue | 1 |
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| container_title | Journal of crystal growth |
| container_volume | 120 |
| creator | Droopad, R. Shiralagi, K.T. Puechner, R.A. Choi, K.Y. Maracas, G.N. |
| description | Low temperature growth of GaAs by gas source molecular beam epitaxy (GSMBE) is investigated. Reflection high energy electron diffraction is used to monitor the low temperature buffer (LTB) growth and anneal conditions. Growth at low temperatures with dimeric arsenic is more sensitive to the V/III flux ratios and substrate temperatures than with As
4 used in solid source MBE. Temperature dependent conductivity and deep level transient spectroscopy measurements are presented to observe trap outdiffusion from the LTB into subsequently grown FET channels. Low temperature photoluminescence spectra show degradation of quantum well properties when LTBs are grown with increasing V/III flux ratios. |
| doi_str_mv | 10.1016/0022-0248(92)90391-U |
| format | Article |
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| ispartof | Journal of crystal growth, 1992-05, Vol.120 (1), p.200-205 |
| issn | 0022-0248 1873-5002 |
| language | eng |
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| source | Elsevier ScienceDirect Journals Complete |
| subjects | Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Physics |
| title | Low temperature GaAs grown by gas source molecular beam epitaxy |
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