Heavily doped GaAs : Se. II, electron mobility

A study of the mobility μ of Se-doped n+-GaAs grown by metalorganic chemical vapor deposition is presented. A significant decrease in μ is observed for n>1×1018 cm−3, which is a general characteristic of n+-GaAs. Previous explanations that the low values of μ are the result of autocompensation by...

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Veröffentlicht in:	Journal of applied physics 1990-09, Vol.68 (5), p.2376-2381
Hauptverfasser:	SZMYD, D. M, HANNA, M. C, MAJERFELD, A
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity phenomena in semiconductors and insulators Electronic transport in condensed matter Exact sciences and technology Low-field transport and mobility piezoresistance Physics
Online-Zugang:	Volltext
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