High-voltage picosecond photoconductor switch based on low-temperature-grown GaAs

A GaAs material grown by molecular beam epitaxy at a low substrate temperature was used to fabricate a photoconductor switch that produces 6-V picosecond electrical pulses. The pulses were produced on a microwave coplanar-strip transmission line lithographically patterned on the low-temperature (LT)...

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Veröffentlicht in:	IEEE transactions on electron devices 1990-12, Vol.37 (12), p.2493-2498
Hauptverfasser:	Frankel, M.Y., Whitaker, J.F., Mourou, G.A., Smith, F.W., Calawa, A.R.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Electronics And Electrical Engineering Exact sciences and technology Gallium arsenide Molecular beam epitaxial growth Optical materials Optical pulse generation Optical pulses Optoelectronic devices Photoconducting materials Photoconductivity Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Substrates Switches Voltage
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