Towards an ideal high-κ HfO2–ZrO2-based dielectric

The existence of a morphotropic phase boundary (MPB) inside HfO2–ZrO2 solid solution thin films has been predicted; if it exists, it provides a new path toward an ideal silicon-compatible dielectric. Herein, we investigate the structural evolution along with the dielectric and ferroelectric behavior...

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Veröffentlicht in:	Nanoscale 2021-08, Vol.13 (32), p.13631-13640
Hauptverfasser:	Kashir, Alireza, Farahani, Mehrdad Ghiasabadi, Hwang, Hyunsang
Format:	Artikel
Sprache:	eng
Schlagworte:	Alternating current Antiferroelectricity CMOS Density Dielectric properties Dielectric strength Electric fields Ferroelectric materials Hafnium oxide Permittivity Solid solutions Structural analysis Thin films Zirconium dioxide
Online-Zugang:	Volltext
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