Linear and nonlinear analysis of submicron n super(+)nn super(+) diodes for microwave generators

A theoretical investigation of the electrical behavior of submicron n super(+)nn super(+) diode microwave generators is presented. Generation frequencies up to 800 GHz are predicted for InP made devices working at 300 K with an active-region length of 0.2 micrometer.

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Veröffentlicht in:Microelectronic engineering 1992-01, Vol.19 (1-4), p.417-420
Hauptverfasser: Gruzhinskis, V, Starikov, E, Shiktorov, P, Reggiani, L, Varani, L, Kuhn, T
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Sprache:eng
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Zusammenfassung:A theoretical investigation of the electrical behavior of submicron n super(+)nn super(+) diode microwave generators is presented. Generation frequencies up to 800 GHz are predicted for InP made devices working at 300 K with an active-region length of 0.2 micrometer.
ISSN:0167-9317