Deep-ultraviolet photodetector based on pulsed-laser-deposited Cs3Cu2I5 films/n-Si heterojunction
All-inorganic lead-free perovskite Cs3Cu2I5 thin films were prepared using pulsed laser deposition. Effects of the substrate temperature, laser energy, and laser frequency on the film structure and optoelectronic properties were studied. A heterojunction photodetector based on Cs3Cu2I5/n−Si was cons...
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| Veröffentlicht in: | Optics letters 2021-09, Vol.46 (17), p.4252-4255 |
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| container_title | Optics letters |
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| creator | Li, Xiaoxuan Zhang, Lichun Zhou, Xiaoyu Wang, Cheng Zhou, Zhiying He, Shunli Tian, Dan Ren, Zhichao Yang, Chuanlu Zhao, Fengzhou |
| description | All-inorganic lead-free perovskite Cs3Cu2I5 thin films were prepared using pulsed laser deposition. Effects of the substrate temperature, laser energy, and laser frequency on the film structure and optoelectronic properties were studied. A heterojunction photodetector based on Cs3Cu2I5/n−Si was constructed, and the deep-ultraviolet photoresponse was obtained. A high Ilight/Idark ratio of 130 was achieved at −1.3V, and the peak response of the heterojunction photodetector was 70.8 mA/W (280 nm), with the corresponding specific detectivity of 9.44×1011cm⋅Hz1/2⋅W−1. Moreover, the device showed good stability after being exposed to air for 30 days. |
| doi_str_mv | 10.1364/OL.432497 |
| format | Article |
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Effects of the substrate temperature, laser energy, and laser frequency on the film structure and optoelectronic properties were studied. A heterojunction photodetector based on Cs3Cu2I5/n−Si was constructed, and the deep-ultraviolet photoresponse was obtained. A high Ilight/Idark ratio of 130 was achieved at −1.3V, and the peak response of the heterojunction photodetector was 70.8 mA/W (280 nm), with the corresponding specific detectivity of 9.44×1011cm⋅Hz1/2⋅W−1. Moreover, the device showed good stability after being exposed to air for 30 days.</description><identifier>ISSN: 0146-9592</identifier><identifier>EISSN: 1539-4794</identifier><identifier>DOI: 10.1364/OL.432497</identifier><language>eng</language><publisher>Washington: Optical Society of America</publisher><subject>Heterojunctions ; Lasers ; Lead free ; Optoelectronics ; Perovskites ; Photometers ; Pulsed laser deposition ; Pulsed lasers ; Substrates ; Thin films ; Ultraviolet detectors</subject><ispartof>Optics letters, 2021-09, Vol.46 (17), p.4252-4255</ispartof><rights>Copyright Optical Society of America Sep 1, 2021</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Li, Xiaoxuan</creatorcontrib><creatorcontrib>Zhang, Lichun</creatorcontrib><creatorcontrib>Zhou, Xiaoyu</creatorcontrib><creatorcontrib>Wang, Cheng</creatorcontrib><creatorcontrib>Zhou, Zhiying</creatorcontrib><creatorcontrib>He, Shunli</creatorcontrib><creatorcontrib>Tian, Dan</creatorcontrib><creatorcontrib>Ren, Zhichao</creatorcontrib><creatorcontrib>Yang, Chuanlu</creatorcontrib><creatorcontrib>Zhao, Fengzhou</creatorcontrib><title>Deep-ultraviolet photodetector based on pulsed-laser-deposited Cs3Cu2I5 films/n-Si heterojunction</title><title>Optics letters</title><description>All-inorganic lead-free perovskite Cs3Cu2I5 thin films were prepared using pulsed laser deposition. Effects of the substrate temperature, laser energy, and laser frequency on the film structure and optoelectronic properties were studied. A heterojunction photodetector based on Cs3Cu2I5/n−Si was constructed, and the deep-ultraviolet photoresponse was obtained. A high Ilight/Idark ratio of 130 was achieved at −1.3V, and the peak response of the heterojunction photodetector was 70.8 mA/W (280 nm), with the corresponding specific detectivity of 9.44×1011cm⋅Hz1/2⋅W−1. Moreover, the device showed good stability after being exposed to air for 30 days.</description><subject>Heterojunctions</subject><subject>Lasers</subject><subject>Lead free</subject><subject>Optoelectronics</subject><subject>Perovskites</subject><subject>Photometers</subject><subject>Pulsed laser deposition</subject><subject>Pulsed lasers</subject><subject>Substrates</subject><subject>Thin films</subject><subject>Ultraviolet detectors</subject><issn>0146-9592</issn><issn>1539-4794</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNpdjs1OwzAQhC0EEqVw4A0iceHi1o5_kj2iQKFSpR6Ac-XEGzWVG4fY5vmxBCdOs6P9ZjSE3HO24kLL9X63kqKUUF2QBVcCqKxAXpIF41JTUFBek5sQTowxXQmxIOYZcaLJxdl8D95hLKajj95ixC76uWhNQFv4sZiSyxd12c_U4uTDEPOnCaJJ5VYV_eDOYT3S96E45vDsT2ns4uDHW3LVm5y9-9Ml-dy8fDRvdLd_3TZPOzrlaZGKHjsAxpC3miluhGpZ3XOLsgbojYUOWlsj7yyzreVgLeelttIqoYQ0QizJ42_vNPuvhCEezkPo0Dkzok_hUCpdK9AcIKMP_9CTT_OY12WqUkoymUt_ANx0ZJw</recordid><startdate>20210901</startdate><enddate>20210901</enddate><creator>Li, Xiaoxuan</creator><creator>Zhang, Lichun</creator><creator>Zhou, Xiaoyu</creator><creator>Wang, Cheng</creator><creator>Zhou, Zhiying</creator><creator>He, Shunli</creator><creator>Tian, Dan</creator><creator>Ren, Zhichao</creator><creator>Yang, Chuanlu</creator><creator>Zhao, Fengzhou</creator><general>Optical Society of America</general><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7X8</scope></search><sort><creationdate>20210901</creationdate><title>Deep-ultraviolet photodetector based on pulsed-laser-deposited Cs3Cu2I5 films/n-Si heterojunction</title><author>Li, Xiaoxuan ; Zhang, Lichun ; Zhou, Xiaoyu ; Wang, Cheng ; Zhou, Zhiying ; He, Shunli ; Tian, Dan ; Ren, Zhichao ; Yang, Chuanlu ; Zhao, Fengzhou</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p146t-3fec9900e1b6051a35b08f1de4899fad9c9bd8e1cd0dbd19dd1126d4d53534a33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Heterojunctions</topic><topic>Lasers</topic><topic>Lead free</topic><topic>Optoelectronics</topic><topic>Perovskites</topic><topic>Photometers</topic><topic>Pulsed laser deposition</topic><topic>Pulsed lasers</topic><topic>Substrates</topic><topic>Thin films</topic><topic>Ultraviolet detectors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Li, Xiaoxuan</creatorcontrib><creatorcontrib>Zhang, Lichun</creatorcontrib><creatorcontrib>Zhou, Xiaoyu</creatorcontrib><creatorcontrib>Wang, Cheng</creatorcontrib><creatorcontrib>Zhou, Zhiying</creatorcontrib><creatorcontrib>He, Shunli</creatorcontrib><creatorcontrib>Tian, Dan</creatorcontrib><creatorcontrib>Ren, Zhichao</creatorcontrib><creatorcontrib>Yang, Chuanlu</creatorcontrib><creatorcontrib>Zhao, Fengzhou</creatorcontrib><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>MEDLINE - Academic</collection><jtitle>Optics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Li, Xiaoxuan</au><au>Zhang, Lichun</au><au>Zhou, Xiaoyu</au><au>Wang, Cheng</au><au>Zhou, Zhiying</au><au>He, Shunli</au><au>Tian, Dan</au><au>Ren, Zhichao</au><au>Yang, Chuanlu</au><au>Zhao, Fengzhou</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Deep-ultraviolet photodetector based on pulsed-laser-deposited Cs3Cu2I5 films/n-Si heterojunction</atitle><jtitle>Optics letters</jtitle><date>2021-09-01</date><risdate>2021</risdate><volume>46</volume><issue>17</issue><spage>4252</spage><epage>4255</epage><pages>4252-4255</pages><issn>0146-9592</issn><eissn>1539-4794</eissn><abstract>All-inorganic lead-free perovskite Cs3Cu2I5 thin films were prepared using pulsed laser deposition. Effects of the substrate temperature, laser energy, and laser frequency on the film structure and optoelectronic properties were studied. A heterojunction photodetector based on Cs3Cu2I5/n−Si was constructed, and the deep-ultraviolet photoresponse was obtained. A high Ilight/Idark ratio of 130 was achieved at −1.3V, and the peak response of the heterojunction photodetector was 70.8 mA/W (280 nm), with the corresponding specific detectivity of 9.44×1011cm⋅Hz1/2⋅W−1. Moreover, the device showed good stability after being exposed to air for 30 days.</abstract><cop>Washington</cop><pub>Optical Society of America</pub><doi>10.1364/OL.432497</doi><tpages>4</tpages></addata></record> |
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| language | eng |
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| source | Optica Publishing Group Journals |
| subjects | Heterojunctions Lasers Lead free Optoelectronics Perovskites Photometers Pulsed laser deposition Pulsed lasers Substrates Thin films Ultraviolet detectors |
| title | Deep-ultraviolet photodetector based on pulsed-laser-deposited Cs3Cu2I5 films/n-Si heterojunction |
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