Kink-related low-frequency noise overshoot in Si NMOSTs at liquid helium temperatures

In this paper, the excess low-frequency noise observed in an Si MOSFET operating at liquid He temperatures is investigated in detail. More specifically, the influence of both temperature and bias voltage on the kink-related noise overshoot is reported and discussed in view of a recently proposed mod...

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Veröffentlicht in:	Solid-state electronics 1992, Vol.35 (10), p.1455-1460
Hauptverfasser:	Simoen, E., Dierickx, B.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
Online-Zugang:	Volltext
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