Kinetics of diffusion growth of silicides in silicon-thin-metal-film systems

A kinetic model for diffusional growth of silicides in thin-metal-film–silicon systems is proposed. The time dependence of the growth has been shown to be a function of the morphology of the growing silicide and the controlling diffusion process (diffusion in the film, interface diffusion). If the p...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of applied physics 1992-08, Vol.72 (4), p.1356-1361
Hauptverfasser:	BARG, A. I, BOKSTEIN, B. S, KLINGER, L. M
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Metals. Metallurgy Physics Solid surfaces and solid-solid interfaces Surface structure and topography Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!