Kinetics of diffusion growth of silicides in silicon-thin-metal-film systems

A kinetic model for diffusional growth of silicides in thin-metal-film–silicon systems is proposed. The time dependence of the growth has been shown to be a function of the morphology of the growing silicide and the controlling diffusion process (diffusion in the film, interface diffusion). If the p...

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Veröffentlicht in:	Journal of applied physics 1992-08, Vol.72 (4), p.1356-1361
Hauptverfasser:	BARG, A. I, BOKSTEIN, B. S, KLINGER, L. M
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Metals. Metallurgy Physics Solid surfaces and solid-solid interfaces Surface structure and topography Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
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container_title	Journal of applied physics
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creator	BARG, A. I BOKSTEIN, B. S KLINGER, L. M
description	A kinetic model for diffusional growth of silicides in thin-metal-film–silicon systems is proposed. The time dependence of the growth has been shown to be a function of the morphology of the growing silicide and the controlling diffusion process (diffusion in the film, interface diffusion). If the phase grows only in depth the parabolic dependence of silicide thickness h on time t in most cases follows the relation h≂t0.5. If silicide grows only in width w, then w≂t. In the case of simultaneous change of thickness and width when h/w=const the growth is proportional to t0.33.
doi_str_mv	10.1063/1.351746
format	Article
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subjects	Applied sciences Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Metals. Metallurgy Physics Solid surfaces and solid-solid interfaces Surface structure and topography Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
title	Kinetics of diffusion growth of silicides in silicon-thin-metal-film systems
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