High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers

We report on the fabrication and characterization of photoconductive ultraviolet detectors based on insulating single-crystal GaN. The active layer (GaN) was deposited over basal-plane sapphire substrates using a unique switched atomic-layer-epitaxy process. The sensors were measured to have a respo...

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Veröffentlicht in:Applied physics letters 1992-06, Vol.60 (23), p.2917-2919
Hauptverfasser: ASIF, KHAN M, KUZNIA, J. N, OLSON, D. T, VAN HOVE, J. M, BLASINGAME, M, REITZ, L. F
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Sprache:eng
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