High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers
We report on the fabrication and characterization of photoconductive ultraviolet detectors based on insulating single-crystal GaN. The active layer (GaN) was deposited over basal-plane sapphire substrates using a unique switched atomic-layer-epitaxy process. The sensors were measured to have a respo...
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Veröffentlicht in: | Applied physics letters 1992-06, Vol.60 (23), p.2917-2919 |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
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