High breakdown voltage, sub-micron, strained InGaAlAs/GaAs FET's
Submicron gate GaAs FETs with a pseudomorphic surface layer of InGaAlAs used to increase breakdown voltage have been fabricated. A 0.2- mu m gate length device with f/sub max/ of 80 GHz had a saturation current of 360 mA/mm and a gate-to-drain breakdown of 11.5 V. The effect upon device performance...
Gespeichert in:
Hauptverfasser: | , , , |
---|---|
Format: | Tagungsbericht |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Submicron gate GaAs FETs with a pseudomorphic surface layer of InGaAlAs used to increase breakdown voltage have been fabricated. A 0.2- mu m gate length device with f/sub max/ of 80 GHz had a saturation current of 360 mA/mm and a gate-to-drain breakdown of 11.5 V. The effect upon device performance of gate length, source-to-drain spacing and Al mole fraction was also investigated. The breakdown voltage showed only small changes with changes in gate length at submicron dimensions. The source-to-drain spacing changed not only the breakdown voltage but also appeared to change the mechanism that limits high-voltage performance.< > |
---|---|
ISSN: | 0149-645X 2576-7216 |
DOI: | 10.1109/MWSYM.1992.188066 |