Efficient diffraction-limited beam combining of semiconductor laser diode arrays using photorefractive BaTiO3
Beam combining of 820-nm-wavelength laser diodes using two-wave mixing in BaTiO3 is reported. Energy transfer efficiencies up to 80 percent were obtained with an index-guided diode. Efficient beam combining of two injection-locked laser arrays was demonstrated. Nearly 100 mW power in a diffraction-l...
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| Veröffentlicht in: | IEEE photonics technology letters 1990-08, Vol.2 (8), p.568-570 |
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| container_end_page | 570 |
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| container_issue | 8 |
| container_start_page | 568 |
| container_title | IEEE photonics technology letters |
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| creator | VERDIELL, J. M RAJBENBACH, H HUIGNARD, J. P |
| description | Beam combining of 820-nm-wavelength laser diodes using two-wave mixing in BaTiO3 is reported. Energy transfer efficiencies up to 80 percent were obtained with an index-guided diode. Efficient beam combining of two injection-locked laser arrays was demonstrated. Nearly 100 mW power in a diffraction-limited beam was obtained on the combined beam. Crystal response time on the order of a few seconds was measured. It is noted that this technique could prove very useful for phase-locking and combining very high-power laser diode arrays such as laser bars or surface emitting arrays, or independent lasers widely separated from each other. (I.E.) |
| doi_str_mv | 10.1109/68.58051 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_pasca</sourceid><recordid>TN_cdi_proquest_miscellaneous_25645494</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>25645494</sourcerecordid><originalsourceid>FETCH-LOGICAL-p213t-e089a5ea6c472f0702636defc2a8c75dc01c6b1eea3bc103112be2e51ce71e273</originalsourceid><addsrcrecordid>eNotjktLw0AUhQdRsFbBnzALcZc6dx55LLXUBxS6qeswubmjI0mmziRC_72RujoHzncOh7FbECsAUT3k5cqUwsAZW0ClIRNQ6PPZi9kDKHPJrlL6EgK0UXrB-o1zHj0NI2-9c9Hi6MOQdb73I7W8IdtzDH3jBz988OB4ot5jGNoJxxB5ZxPFuRla4jZGe0x8Sn_k4TPMOZ0Gf4g_2b3fqWt24WyX6OZfl-z9ebNfv2bb3cvb-nGbHSSoMSNRVtaQzVEX0olCyFzlLTmUtsTCtCgA8waIrGoQhAKQDUkygFQAyUIt2f1p9xDD90RprHufkLrODhSmVEuTa6MrPYN3_6BNaLv57oA-1YfoexuPtc5LrcpS_QKqIGlO</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>25645494</pqid></control><display><type>article</type><title>Efficient diffraction-limited beam combining of semiconductor laser diode arrays using photorefractive BaTiO3</title><source>IEEE Electronic Library (IEL)</source><creator>VERDIELL, J. M ; RAJBENBACH, H ; HUIGNARD, J. P</creator><creatorcontrib>VERDIELL, J. M ; RAJBENBACH, H ; HUIGNARD, J. P</creatorcontrib><description>Beam combining of 820-nm-wavelength laser diodes using two-wave mixing in BaTiO3 is reported. Energy transfer efficiencies up to 80 percent were obtained with an index-guided diode. Efficient beam combining of two injection-locked laser arrays was demonstrated. Nearly 100 mW power in a diffraction-limited beam was obtained on the combined beam. Crystal response time on the order of a few seconds was measured. It is noted that this technique could prove very useful for phase-locking and combining very high-power laser diode arrays such as laser bars or surface emitting arrays, or independent lasers widely separated from each other. (I.E.)</description><identifier>ISSN: 1041-1135</identifier><identifier>EISSN: 1941-0174</identifier><identifier>DOI: 10.1109/68.58051</identifier><language>eng</language><publisher>New York, NY: Institute of Electrical and Electronics Engineers</publisher><subject>Exact sciences and technology ; Fundamental areas of phenomenology (including applications) ; Nonlinear optics ; Optics ; Physics</subject><ispartof>IEEE photonics technology letters, 1990-08, Vol.2 (8), p.568-570</ispartof><rights>1993 INIST-CNRS</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=4684388$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>VERDIELL, J. M</creatorcontrib><creatorcontrib>RAJBENBACH, H</creatorcontrib><creatorcontrib>HUIGNARD, J. P</creatorcontrib><title>Efficient diffraction-limited beam combining of semiconductor laser diode arrays using photorefractive BaTiO3</title><title>IEEE photonics technology letters</title><description>Beam combining of 820-nm-wavelength laser diodes using two-wave mixing in BaTiO3 is reported. Energy transfer efficiencies up to 80 percent were obtained with an index-guided diode. Efficient beam combining of two injection-locked laser arrays was demonstrated. Nearly 100 mW power in a diffraction-limited beam was obtained on the combined beam. Crystal response time on the order of a few seconds was measured. It is noted that this technique could prove very useful for phase-locking and combining very high-power laser diode arrays such as laser bars or surface emitting arrays, or independent lasers widely separated from each other. (I.E.)</description><subject>Exact sciences and technology</subject><subject>Fundamental areas of phenomenology (including applications)</subject><subject>Nonlinear optics</subject><subject>Optics</subject><subject>Physics</subject><issn>1041-1135</issn><issn>1941-0174</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1990</creationdate><recordtype>article</recordtype><recordid>eNotjktLw0AUhQdRsFbBnzALcZc6dx55LLXUBxS6qeswubmjI0mmziRC_72RujoHzncOh7FbECsAUT3k5cqUwsAZW0ClIRNQ6PPZi9kDKHPJrlL6EgK0UXrB-o1zHj0NI2-9c9Hi6MOQdb73I7W8IdtzDH3jBz988OB4ot5jGNoJxxB5ZxPFuRla4jZGe0x8Sn_k4TPMOZ0Gf4g_2b3fqWt24WyX6OZfl-z9ebNfv2bb3cvb-nGbHSSoMSNRVtaQzVEX0olCyFzlLTmUtsTCtCgA8waIrGoQhAKQDUkygFQAyUIt2f1p9xDD90RprHufkLrODhSmVEuTa6MrPYN3_6BNaLv57oA-1YfoexuPtc5LrcpS_QKqIGlO</recordid><startdate>19900801</startdate><enddate>19900801</enddate><creator>VERDIELL, J. M</creator><creator>RAJBENBACH, H</creator><creator>HUIGNARD, J. P</creator><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>19900801</creationdate><title>Efficient diffraction-limited beam combining of semiconductor laser diode arrays using photorefractive BaTiO3</title><author>VERDIELL, J. M ; RAJBENBACH, H ; HUIGNARD, J. P</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p213t-e089a5ea6c472f0702636defc2a8c75dc01c6b1eea3bc103112be2e51ce71e273</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1990</creationdate><topic>Exact sciences and technology</topic><topic>Fundamental areas of phenomenology (including applications)</topic><topic>Nonlinear optics</topic><topic>Optics</topic><topic>Physics</topic><toplevel>online_resources</toplevel><creatorcontrib>VERDIELL, J. M</creatorcontrib><creatorcontrib>RAJBENBACH, H</creatorcontrib><creatorcontrib>HUIGNARD, J. P</creatorcontrib><collection>Pascal-Francis</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE photonics technology letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>VERDIELL, J. M</au><au>RAJBENBACH, H</au><au>HUIGNARD, J. P</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Efficient diffraction-limited beam combining of semiconductor laser diode arrays using photorefractive BaTiO3</atitle><jtitle>IEEE photonics technology letters</jtitle><date>1990-08-01</date><risdate>1990</risdate><volume>2</volume><issue>8</issue><spage>568</spage><epage>570</epage><pages>568-570</pages><issn>1041-1135</issn><eissn>1941-0174</eissn><abstract>Beam combining of 820-nm-wavelength laser diodes using two-wave mixing in BaTiO3 is reported. Energy transfer efficiencies up to 80 percent were obtained with an index-guided diode. Efficient beam combining of two injection-locked laser arrays was demonstrated. Nearly 100 mW power in a diffraction-limited beam was obtained on the combined beam. Crystal response time on the order of a few seconds was measured. It is noted that this technique could prove very useful for phase-locking and combining very high-power laser diode arrays such as laser bars or surface emitting arrays, or independent lasers widely separated from each other. (I.E.)</abstract><cop>New York, NY</cop><pub>Institute of Electrical and Electronics Engineers</pub><doi>10.1109/68.58051</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1041-1135 |
| ispartof | IEEE photonics technology letters, 1990-08, Vol.2 (8), p.568-570 |
| issn | 1041-1135 1941-0174 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_25645494 |
| source | IEEE Electronic Library (IEL) |
| subjects | Exact sciences and technology Fundamental areas of phenomenology (including applications) Nonlinear optics Optics Physics |
| title | Efficient diffraction-limited beam combining of semiconductor laser diode arrays using photorefractive BaTiO3 |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-24T18%3A39%3A45IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_pasca&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Efficient%20diffraction-limited%20beam%20combining%20of%20semiconductor%20laser%20diode%20arrays%20using%20photorefractive%20BaTiO3&rft.jtitle=IEEE%20photonics%20technology%20letters&rft.au=VERDIELL,%20J.%20M&rft.date=1990-08-01&rft.volume=2&rft.issue=8&rft.spage=568&rft.epage=570&rft.pages=568-570&rft.issn=1041-1135&rft.eissn=1941-0174&rft_id=info:doi/10.1109/68.58051&rft_dat=%3Cproquest_pasca%3E25645494%3C/proquest_pasca%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=25645494&rft_id=info:pmid/&rfr_iscdi=true |