Effects of residual impurities on Zn electrical activity in Zn-doped InGaAlP grown by metalorganic chemical vapor deposition

The effects of residual impurities, such as hydrogen and oxygen, on Zn electrical activity have been studied for Zn-doped In 0.5(Ga 1− x Al x ) 0.5P grown by low-pressure metalorganic chemical vapor deposition. Zn electrical activity with a p-type cap l ayer grown on Zn-doped InGaAlP was found to be...

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Veröffentlicht in:	Journal of crystal growth 1992, Vol.123 (1), p.181-187
Hauptverfasser:	Nishikawa, Yukie, Suzuki, Mariko, Ishikawa, Masayuki, Kokubun, Yoshihiro, Hatakoshi, Gen-ichi
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity phenomena in semiconductors and insulators Electronic transport in condensed matter Exact sciences and technology Low-field transport and mobility piezoresistance Physics
Online-Zugang:	Volltext
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