Destruction of the quantum well structure of thin silicon-germanium superlattices by ion implantation
Thin SimGen superlattices (SLs) have been implanted with dopant and neutral ions and annealed at low temperature (600 °C) during a short time (30 min). Intermixing between the two species takes place when the SL has been rendered amorphous. This effect is due to disorder only and no dopant impurity...
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| Veröffentlicht in: | Applied physics letters 1992-04, Vol.60 (14), p.1673-1675 |
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| container_end_page | 1675 |
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| container_issue | 14 |
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| container_title | Applied physics letters |
| container_volume | 60 |
| creator | FREIMAN, W BESERMAN, R DETTMER, K KESSLER, F. R |
| description | Thin SimGen superlattices (SLs) have been implanted with dopant and neutral ions and annealed at low temperature (600 °C) during a short time (30 min). Intermixing between the two species takes place when the SL has been rendered amorphous. This effect is due to disorder only and no dopant impurity influence could be seen in contrast to the case of III–V SLs. |
| doi_str_mv | 10.1063/1.107233 |
| format | Article |
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| fulltext | fulltext |
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| ispartof | Applied physics letters, 1992-04, Vol.60 (14), p.1673-1675 |
| issn | 0003-6951 1077-3118 |
| language | eng |
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| source | AIP Digital Archive |
| subjects | Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) |
| title | Destruction of the quantum well structure of thin silicon-germanium superlattices by ion implantation |
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