Identification of titanium disilicide thin films by SIMS

Experimental results on secondary ion currents 76TiSi + and sputtering rates dependence vs composition and resistivity of titanium silicide films are presented. It is shown that with the help of static and dynamic SIMS measurements, the identification of the titanium disilicide phase in thin films o...

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Veröffentlicht in:	Vacuum 1992, Vol.43 (5), p.635-636
Hauptverfasser:	Antonov, SL, Belevsky, VI, Gusev, IV, Orlikovsky, AA, Valiev, KA, Vasiliev, AG
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surface and interface dynamics and vibrations Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
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Beschreibung
Zusammenfassung:	Experimental results on secondary ion currents 76TiSi + and sputtering rates dependence vs composition and resistivity of titanium silicide films are presented. It is shown that with the help of static and dynamic SIMS measurements, the identification of the titanium disilicide phase in thin films of titanium silicide is possible.
ISSN:	0042-207X 1879-2715
DOI:	10.1016/0042-207X(92)90095-E