Defect models in electron-irradiated n-type GaAs

1 MeV electron irradiation has been performed in degenerate, n-type (n≂2×1017 cm−3), molecular beam epitaxial GaAs layers, and Hall effect measurements have been carried out during the irradiation in order to get accurate defect production data. The results have been fitted with statistical models,...

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Veröffentlicht in:	Journal of applied physics 1992-07, Vol.72 (1), p.78-81
Hauptverfasser:	ZIEBRO, B, HEMSKY, J. W, LOOK, D. C
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron states Exact sciences and technology Impurity and defect levels Physics
Online-Zugang:	Volltext
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