Ultrathin Multibridge Channel Transistor Enabled by van der Waals Assembly

Multibridge channel field‐effect transistors (MBCFETs) enable improved gate control and flow of a large drive current and they are regarded as promising candidates for next‐generation transistor architecture. However, in achieving a larger drive current with a thinner channel, limitations arise from...

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Veröffentlicht in:	Advanced materials (Weinheim) 2021-09, Vol.33 (37), p.e2102201-n/a
Hauptverfasser:	Huang, Xiaohe, Liu, Chunsen, Zeng, Senfeng, Tang, Zhaowu, Wang, Shuiyuan, Chen, Xiaozhang, Zhang, David Wei, Zhou, Peng
Format:	Artikel
Sprache:	eng
Schlagworte:	2D materials Channels gate‐all‐around Leakage current multibridge channels Power consumption Room temperature Semiconductor devices Thickness Transistors Two dimensional materials
Online-Zugang:	Volltext
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