Terahertz emission from ultrathin bismuth layers

Thinner than 10 nm layers of bismuth (Bi) were grown on (111) Si substrates by molecular beam epitaxy. Terahertz (THz) radiation pulses from these layers excited by tunable wavelength femtosecond optical pulses were measured. THz emission sets on when the photon energy exceeds 0.45 eV, which was exp...

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Veröffentlicht in:	Optics letters 2021-08, Vol.46 (15), p.3681-3684
Hauptverfasser:	Devenson, Jan, Norkus, Ričardas, Juškėnas, Remigijus, Krotkus, Arūnas
Format:	Artikel
Sprache:	eng
Schlagworte:	Bismuth Epitaxial growth Femtosecond pulses Molecular beam epitaxy Optical pulses Photoelectric effect Photoelectric emission Silicon substrates Thickness
Online-Zugang:	Volltext
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