Terahertz emission from ultrathin bismuth layers
Thinner than 10 nm layers of bismuth (Bi) were grown on (111) Si substrates by molecular beam epitaxy. Terahertz (THz) radiation pulses from these layers excited by tunable wavelength femtosecond optical pulses were measured. THz emission sets on when the photon energy exceeds 0.45 eV, which was exp...
Gespeichert in:
| Veröffentlicht in: | Optics letters 2021-08, Vol.46 (15), p.3681-3684 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 3684 |
|---|---|
| container_issue | 15 |
| container_start_page | 3681 |
| container_title | Optics letters |
| container_volume | 46 |
| creator | Devenson, Jan Norkus, Ričardas Juškėnas, Remigijus Krotkus, Arūnas |
| description | Thinner than 10 nm layers of bismuth (Bi) were grown on (111) Si substrates by molecular beam epitaxy. Terahertz (THz) radiation pulses from these layers excited by tunable wavelength femtosecond optical pulses were measured. THz emission sets on when the photon energy exceeds 0.45 eV, which was explained by the semimetal-to-semiconductor transition at this Bi layer thickness. A THz signal has both isotropic and anisotropic components that could be caused by the lack of balance of lateral photocurrent components and the shift currents, respectively. |
| doi_str_mv | 10.1364/OL.425271 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_2557223601</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2560873647</sourcerecordid><originalsourceid>FETCH-LOGICAL-c290t-44869f0f64c2ba0773b149bed7030214ab103a8c59fb0349c3a75d2440ad5dc83</originalsourceid><addsrcrecordid>eNpd0L1OwzAUhmELgUQoDNxBJBYYUo7tYzseUUUBKVKXMluO46ip8lPsZChXT1CYmM7y6OjTS8g9hTXlEp93xRqZYIpekIQKrjNUGi9JAhRlpoVm1-QmxiMASMV5QmDvgz34MH6nvmtibIY-rcPQpVM7Bjsemj4tm9hN4yFt7dmHeEuuattGf_d3V-Rz-7rfvGfF7u1j81JkjmkYM8Rc6hpqiY6VFpTiJUVd-koBB0bRlhS4zZ3QdQkcteNWiYohgq1E5XK-Io_L31MYviYfRzPPc75tbe-HKRomhGKMS6AzffhHj8MU-nndrCTkag6jZvW0KBeGGIOvzSk0nQ1nQ8H8tjO7wizt-A-GZ18Z</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2560873647</pqid></control><display><type>article</type><title>Terahertz emission from ultrathin bismuth layers</title><source>Optica Publishing Group Journals</source><creator>Devenson, Jan ; Norkus, Ričardas ; Juškėnas, Remigijus ; Krotkus, Arūnas</creator><creatorcontrib>Devenson, Jan ; Norkus, Ričardas ; Juškėnas, Remigijus ; Krotkus, Arūnas</creatorcontrib><description>Thinner than 10 nm layers of bismuth (Bi) were grown on (111) Si substrates by molecular beam epitaxy. Terahertz (THz) radiation pulses from these layers excited by tunable wavelength femtosecond optical pulses were measured. THz emission sets on when the photon energy exceeds 0.45 eV, which was explained by the semimetal-to-semiconductor transition at this Bi layer thickness. A THz signal has both isotropic and anisotropic components that could be caused by the lack of balance of lateral photocurrent components and the shift currents, respectively.</description><identifier>ISSN: 0146-9592</identifier><identifier>EISSN: 1539-4794</identifier><identifier>DOI: 10.1364/OL.425271</identifier><language>eng</language><publisher>Washington: Optical Society of America</publisher><subject>Bismuth ; Epitaxial growth ; Femtosecond pulses ; Molecular beam epitaxy ; Optical pulses ; Photoelectric effect ; Photoelectric emission ; Silicon substrates ; Thickness</subject><ispartof>Optics letters, 2021-08, Vol.46 (15), p.3681-3684</ispartof><rights>Copyright Optical Society of America Aug 1, 2021</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c290t-44869f0f64c2ba0773b149bed7030214ab103a8c59fb0349c3a75d2440ad5dc83</citedby><cites>FETCH-LOGICAL-c290t-44869f0f64c2ba0773b149bed7030214ab103a8c59fb0349c3a75d2440ad5dc83</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,3245,27901,27902</link.rule.ids></links><search><creatorcontrib>Devenson, Jan</creatorcontrib><creatorcontrib>Norkus, Ričardas</creatorcontrib><creatorcontrib>Juškėnas, Remigijus</creatorcontrib><creatorcontrib>Krotkus, Arūnas</creatorcontrib><title>Terahertz emission from ultrathin bismuth layers</title><title>Optics letters</title><description>Thinner than 10 nm layers of bismuth (Bi) were grown on (111) Si substrates by molecular beam epitaxy. Terahertz (THz) radiation pulses from these layers excited by tunable wavelength femtosecond optical pulses were measured. THz emission sets on when the photon energy exceeds 0.45 eV, which was explained by the semimetal-to-semiconductor transition at this Bi layer thickness. A THz signal has both isotropic and anisotropic components that could be caused by the lack of balance of lateral photocurrent components and the shift currents, respectively.</description><subject>Bismuth</subject><subject>Epitaxial growth</subject><subject>Femtosecond pulses</subject><subject>Molecular beam epitaxy</subject><subject>Optical pulses</subject><subject>Photoelectric effect</subject><subject>Photoelectric emission</subject><subject>Silicon substrates</subject><subject>Thickness</subject><issn>0146-9592</issn><issn>1539-4794</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNpd0L1OwzAUhmELgUQoDNxBJBYYUo7tYzseUUUBKVKXMluO46ip8lPsZChXT1CYmM7y6OjTS8g9hTXlEp93xRqZYIpekIQKrjNUGi9JAhRlpoVm1-QmxiMASMV5QmDvgz34MH6nvmtibIY-rcPQpVM7Bjsemj4tm9hN4yFt7dmHeEuuattGf_d3V-Rz-7rfvGfF7u1j81JkjmkYM8Rc6hpqiY6VFpTiJUVd-koBB0bRlhS4zZ3QdQkcteNWiYohgq1E5XK-Io_L31MYviYfRzPPc75tbe-HKRomhGKMS6AzffhHj8MU-nndrCTkag6jZvW0KBeGGIOvzSk0nQ1nQ8H8tjO7wizt-A-GZ18Z</recordid><startdate>20210801</startdate><enddate>20210801</enddate><creator>Devenson, Jan</creator><creator>Norkus, Ričardas</creator><creator>Juškėnas, Remigijus</creator><creator>Krotkus, Arūnas</creator><general>Optical Society of America</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7X8</scope></search><sort><creationdate>20210801</creationdate><title>Terahertz emission from ultrathin bismuth layers</title><author>Devenson, Jan ; Norkus, Ričardas ; Juškėnas, Remigijus ; Krotkus, Arūnas</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c290t-44869f0f64c2ba0773b149bed7030214ab103a8c59fb0349c3a75d2440ad5dc83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Bismuth</topic><topic>Epitaxial growth</topic><topic>Femtosecond pulses</topic><topic>Molecular beam epitaxy</topic><topic>Optical pulses</topic><topic>Photoelectric effect</topic><topic>Photoelectric emission</topic><topic>Silicon substrates</topic><topic>Thickness</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Devenson, Jan</creatorcontrib><creatorcontrib>Norkus, Ričardas</creatorcontrib><creatorcontrib>Juškėnas, Remigijus</creatorcontrib><creatorcontrib>Krotkus, Arūnas</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>MEDLINE - Academic</collection><jtitle>Optics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Devenson, Jan</au><au>Norkus, Ričardas</au><au>Juškėnas, Remigijus</au><au>Krotkus, Arūnas</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Terahertz emission from ultrathin bismuth layers</atitle><jtitle>Optics letters</jtitle><date>2021-08-01</date><risdate>2021</risdate><volume>46</volume><issue>15</issue><spage>3681</spage><epage>3684</epage><pages>3681-3684</pages><issn>0146-9592</issn><eissn>1539-4794</eissn><abstract>Thinner than 10 nm layers of bismuth (Bi) were grown on (111) Si substrates by molecular beam epitaxy. Terahertz (THz) radiation pulses from these layers excited by tunable wavelength femtosecond optical pulses were measured. THz emission sets on when the photon energy exceeds 0.45 eV, which was explained by the semimetal-to-semiconductor transition at this Bi layer thickness. A THz signal has both isotropic and anisotropic components that could be caused by the lack of balance of lateral photocurrent components and the shift currents, respectively.</abstract><cop>Washington</cop><pub>Optical Society of America</pub><doi>10.1364/OL.425271</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0146-9592 |
| ispartof | Optics letters, 2021-08, Vol.46 (15), p.3681-3684 |
| issn | 0146-9592 1539-4794 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_2557223601 |
| source | Optica Publishing Group Journals |
| subjects | Bismuth Epitaxial growth Femtosecond pulses Molecular beam epitaxy Optical pulses Photoelectric effect Photoelectric emission Silicon substrates Thickness |
| title | Terahertz emission from ultrathin bismuth layers |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-07T13%3A59%3A09IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Terahertz%20emission%20from%20ultrathin%20bismuth%20layers&rft.jtitle=Optics%20letters&rft.au=Devenson,%20Jan&rft.date=2021-08-01&rft.volume=46&rft.issue=15&rft.spage=3681&rft.epage=3684&rft.pages=3681-3684&rft.issn=0146-9592&rft.eissn=1539-4794&rft_id=info:doi/10.1364/OL.425271&rft_dat=%3Cproquest_cross%3E2560873647%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2560873647&rft_id=info:pmid/&rfr_iscdi=true |