Unveiling the Origin of Robust Ferroelectricity in Sub‑2 nm Hafnium Zirconium Oxide Films

HfO2-based ferroelectrics are highly expected to lead the new paradigm of nanoelectronic devices owing to their unexpected ability to enhance ferroelectricity in the ultimate thickness scaling limit (≤2 nm). However, an understanding of its physical origin remains uncertain because its direct micros...

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Veröffentlicht in:	ACS applied materials & interfaces 2021-08, Vol.13 (30), p.36499-36506
Hauptverfasser:	Lee, Hyangsook, Choe, Duk-Hyun, Jo, Sanghyun, Kim, Jung-Hwa, Lee, Hyun Hwi, Shin, Hyun-Joon, Park, Yeehyun, Kang, Seunghun, Cho, Yeonchoo, Park, Seontae, Moon, Taehwan, Eom, Deokjoon, Leem, Mirine, Kim, Yunseok, Heo, Jinseong, Lee, Eunha, Kim, Hyoungsub
Format:	Artikel
Sprache:	eng
Schlagworte:	Surfaces, Interfaces, and Applications
Online-Zugang:	Volltext
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