Oxidation studies of SiGe

We have studied the kinetics and mechanism of oxidation of SiGe alloys deposited epitaxially onto Si substrates by low-temperature chemical vapor deposition. Ge is shown to enhance oxidation rates by a factor of about 3 in the linear regime, and to be completely rejected from the oxide so that it pi...

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Veröffentlicht in:	J. Appl. Phys.; (United States) 1989-02, Vol.65 (4), p.1724-1728
Hauptverfasser:	LEGOUES, F. K, ROSENBERG, R, NGUYEN, T, HIMPSEL, F, MEYERSON, B. S
Format:	Artikel
Sprache:	eng
Schlagworte:	360602 - Other Materials- Structure & Phase Studies 360605 - Materials- Radiation Effects ALLOYS CATALYSIS CATALYTIC EFFECTS CHALCOGENIDES CHEMICAL COATING CHEMICAL REACTION KINETICS CHEMICAL REACTIONS CHEMICAL VAPOR DEPOSITION Chemistry CRYSTAL STRUCTURE DEPOSITION ELECTRICAL PROPERTIES ELEMENTS EMISSION Exact sciences and technology GERMANIUM GERMANIUM ALLOYS GERMANIUM COMPOUNDS GERMANIUM OXIDES GERMANIUM SILICIDES Inorganic chemistry and origins of life KINETICS Kinetics and mechanism of reactions MATERIALS SCIENCE METALS MICROSTRUCTURE OXIDATION OXIDES OXYGEN COMPOUNDS PHOTOEMISSION PHYSICAL PROPERTIES REACTION KINETICS SECONDARY EMISSION SILICIDES SILICON ALLOYS SILICON COMPOUNDS SILICON OXIDES SURFACE COATING THIN FILMS
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