73-GHz self-aligned SiGe-base bipolar transistors with phosphorus-doped polysilicon emitters
The authors report a thermal-cycle emitter process using phosphorus for the fabrication of self-aligned SiGe-base heterojunction bipolar transistors. The low thermal cycle results in extremely, narrow basewidths and preservation of lightly doped spacers in both the emitter-base and base-collector ju...
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| Veröffentlicht in: | IEEE electron device letters 1992-05, Vol.13 (5), p.259-261 |
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| container_end_page | 261 |
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| container_issue | 5 |
| container_start_page | 259 |
| container_title | IEEE electron device letters |
| container_volume | 13 |
| creator | Crabbe, E.F. Comfort, J.H. Lee, W. Cressler, J.D. Meyerson, B.S. Megdanis, A.C. Sun, J.Y.-C. Stork, J.M.C. |
| description | The authors report a thermal-cycle emitter process using phosphorus for the fabrication of self-aligned SiGe-base heterojunction bipolar transistors. The low thermal cycle results in extremely, narrow basewidths and preservation of lightly doped spacers in both the emitter-base and base-collector junctions for improved breakdown. Transistors with 35-nm basewidths were obtained with low emitter-base reverse leakage and a peak cutoff frequency of 73 GHz for an intrinsic base sheet resistance of 16 k Omega / Square Operator . Minimum NTL (nonthreshold logic) and ECL (emitter-coupled logic) gate delays of 28 and 34 ps, respectively were obtained with these devices.< > |
| doi_str_mv | 10.1109/55.145046 |
| format | Article |
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The low thermal cycle results in extremely, narrow basewidths and preservation of lightly doped spacers in both the emitter-base and base-collector junctions for improved breakdown. Transistors with 35-nm basewidths were obtained with low emitter-base reverse leakage and a peak cutoff frequency of 73 GHz for an intrinsic base sheet resistance of 16 k Omega / Square Operator . Minimum NTL (nonthreshold logic) and ECL (emitter-coupled logic) gate delays of 28 and 34 ps, respectively were obtained with these devices.< ></description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/55.145046</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Bipolar transistors ; Boron ; Cutoff frequency ; Doping ; Electronics ; Exact sciences and technology ; Fabrication ; Furnaces ; Germanium silicon alloys ; Heterojunction bipolar transistors ; Rapid thermal annealing ; Semiconductor electronics. Microelectronics. Optoelectronics. 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The low thermal cycle results in extremely, narrow basewidths and preservation of lightly doped spacers in both the emitter-base and base-collector junctions for improved breakdown. Transistors with 35-nm basewidths were obtained with low emitter-base reverse leakage and a peak cutoff frequency of 73 GHz for an intrinsic base sheet resistance of 16 k Omega / Square Operator . Minimum NTL (nonthreshold logic) and ECL (emitter-coupled logic) gate delays of 28 and 34 ps, respectively were obtained with these devices.< ></description><subject>Applied sciences</subject><subject>Bipolar transistors</subject><subject>Boron</subject><subject>Cutoff frequency</subject><subject>Doping</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Fabrication</subject><subject>Furnaces</subject><subject>Germanium silicon alloys</subject><subject>Heterojunction bipolar transistors</subject><subject>Rapid thermal annealing</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Silicon germanium</subject><subject>Transistors</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1992</creationdate><recordtype>article</recordtype><recordid>eNqNkb1LA0EQxRdRMEYLW6srRLDYuJ-3e6UETYSAhdoJx95-mJVL7ty5IPGv98IFbVMM0_zem8c8hC4pmVBKijspJ1RIIvIjNKJSakxkzo_RiChBMackP0VnAJ-EUCGUGKF3xfFs_pOBrwM2dfxYe5e9xJnHlQGfVbFtapOyLpk1ROiaBNl37JZZu2ygn7QB7Jq21_TcFmIdbbPO_Cp2nU9wjk6CqcFf7PcYvT0-vE7nePE8e5reL7Dlue6wsMKRgvXhgtSF1pWrAiGScxGCDZyrilNrqXNe8Epxxg13xlRWM60YdQUfo5vBt03N18ZDV64iWF_XZu2bDZRMayZzRg4AqSpUfgAopcj7zD14O4A2NQDJh7JNcWXStqSk3DVSSlkOjfTs9d7UgDV16H9qI_wJJFOFlLvbVwMWvff_doPHLwvYkr4</recordid><startdate>19920501</startdate><enddate>19920501</enddate><creator>Crabbe, E.F.</creator><creator>Comfort, J.H.</creator><creator>Lee, W.</creator><creator>Cressler, J.D.</creator><creator>Meyerson, B.S.</creator><creator>Megdanis, A.C.</creator><creator>Sun, J.Y.-C.</creator><creator>Stork, J.M.C.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7SP</scope><scope>7U5</scope></search><sort><creationdate>19920501</creationdate><title>73-GHz self-aligned SiGe-base bipolar transistors with phosphorus-doped polysilicon emitters</title><author>Crabbe, E.F. ; Comfort, J.H. ; Lee, W. ; Cressler, J.D. ; Meyerson, B.S. ; Megdanis, A.C. ; Sun, J.Y.-C. ; Stork, J.M.C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c368t-4c4d092106f58988bdbf005334ffcf337b31cc1dde43b7323a3daabc828721d93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1992</creationdate><topic>Applied sciences</topic><topic>Bipolar transistors</topic><topic>Boron</topic><topic>Cutoff frequency</topic><topic>Doping</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Fabrication</topic><topic>Furnaces</topic><topic>Germanium silicon alloys</topic><topic>Heterojunction bipolar transistors</topic><topic>Rapid thermal annealing</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Silicon germanium</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Crabbe, E.F.</creatorcontrib><creatorcontrib>Comfort, J.H.</creatorcontrib><creatorcontrib>Lee, W.</creatorcontrib><creatorcontrib>Cressler, J.D.</creatorcontrib><creatorcontrib>Meyerson, B.S.</creatorcontrib><creatorcontrib>Megdanis, A.C.</creatorcontrib><creatorcontrib>Sun, J.Y.-C.</creatorcontrib><creatorcontrib>Stork, J.M.C.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Crabbe, E.F.</au><au>Comfort, J.H.</au><au>Lee, W.</au><au>Cressler, J.D.</au><au>Meyerson, B.S.</au><au>Megdanis, A.C.</au><au>Sun, J.Y.-C.</au><au>Stork, J.M.C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>73-GHz self-aligned SiGe-base bipolar transistors with phosphorus-doped polysilicon emitters</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>1992-05-01</date><risdate>1992</risdate><volume>13</volume><issue>5</issue><spage>259</spage><epage>261</epage><pages>259-261</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>The authors report a thermal-cycle emitter process using phosphorus for the fabrication of self-aligned SiGe-base heterojunction bipolar transistors. The low thermal cycle results in extremely, narrow basewidths and preservation of lightly doped spacers in both the emitter-base and base-collector junctions for improved breakdown. Transistors with 35-nm basewidths were obtained with low emitter-base reverse leakage and a peak cutoff frequency of 73 GHz for an intrinsic base sheet resistance of 16 k Omega / Square Operator . Minimum NTL (nonthreshold logic) and ECL (emitter-coupled logic) gate delays of 28 and 34 ps, respectively were obtained with these devices.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/55.145046</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 1992-05, Vol.13 (5), p.259-261 |
| issn | 0741-3106 1558-0563 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_25546092 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Bipolar transistors Boron Cutoff frequency Doping Electronics Exact sciences and technology Fabrication Furnaces Germanium silicon alloys Heterojunction bipolar transistors Rapid thermal annealing Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon germanium Transistors |
| title | 73-GHz self-aligned SiGe-base bipolar transistors with phosphorus-doped polysilicon emitters |
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