Evidence for negatively charged DX-center in Si-doped AlGaAs from persistent photoconductivity measurements

Persistent photoconductivity experiments were carried out in Si-doped Al xGa 1-xAs at 77 K. The density of persistent free electrons was changed by a factor of 4 to 8. The electron mobilities micro were observed to increase for increasing electron densities n and from the behavior of micro(n) the va...

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Veröffentlicht in:	Solid state communications 1991, Vol.77 (5), p.327-330
Hauptverfasser:	Dias, I.F.L., de Oliveira, A.G., Bezerra, J.C., Miranda, R.C., Guimarães, P.S.S., Sampaio, J.F., Chaves, A.S.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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