Visible light emission from semiconducting polymer diodes

Visible light emission from semiconducting polymer diodes

We report visible light emission from Shottky diodes made from semiconducting polymers, confirming the discovery by the Cambridge group [Nature 347, 539 (1990)]. Our results demonstrate that light-emitting diodes can be fabricated by casting the polymer film from solution with no subsequent processi...

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Veröffentlicht in:Applied physics letters 1991-05, Vol.58 (18), p.1982-1984
Hauptverfasser: BRAUN, D, HEEGER, A. J
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Sprache:eng
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Applied sciences
Electronics
Exact sciences and technology
Optoelectronic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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container_end_page 1984
container_issue 18
container_start_page 1982
container_title Applied physics letters
container_volume 58
creator BRAUN, D
HEEGER, A. J
description We report visible light emission from Shottky diodes made from semiconducting polymers, confirming the discovery by the Cambridge group [Nature 347, 539 (1990)]. Our results demonstrate that light-emitting diodes can be fabricated by casting the polymer film from solution with no subsequent processing or heat treatment required. Electrical characterization reveals diode behavior with rectification ratios greater than 104. We propose that tunneling of electrons from the recitifying metal contact into the gap states of the positive polaron majority carriers dominates current flow and provides the mechanism for light emission.
doi_str_mv 10.1063/1.105039
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_25526707</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>25526707</sourcerecordid><originalsourceid>FETCH-LOGICAL-c388t-839641b98db9d3950c5742d2cc28f73bce6646dad3fcc1297bdd2e3ae81dfefb3</originalsourceid><addsrcrecordid>eNpFkEtLAzEYRYMoWKvgT5iN4mY0jyaZLKVYFQpu1G3I5FEjmUnNN1303xtpwdXlwuFwuQhdE3xPsGAPpAbHTJ2gGcFStoyQ7hTNMMasFYqTc3QB8F0rp4zNkPqMEPvkmxQ3X1PjhwgQ89iEkocGarV5dDs7xXHTbHPaD740Lmbn4RKdBZPAXx1zjj5WT-_Ll3b99vy6fFy3lnXd1HZMiQXpVed65Zji2HK5oI5aS7sgWW-9EAvhjGPBWkKV7J2jnhnfERd86Nkc3R6825J_dh4mXTdan5IZfd6BppxTIbGs4N0BtCUDFB_0tsTBlL0mWP99o4k-fFPRm6PTgDUpFDPaCP-8Ekzyyv0CPqFjig</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>25526707</pqid></control><display><type>article</type><title>Visible light emission from semiconducting polymer diodes</title><source>AIP Digital Archive</source><creator>BRAUN, D ; HEEGER, A. J</creator><creatorcontrib>BRAUN, D ; HEEGER, A. J</creatorcontrib><description>We report visible light emission from Shottky diodes made from semiconducting polymers, confirming the discovery by the Cambridge group [Nature 347, 539 (1990)]. Our results demonstrate that light-emitting diodes can be fabricated by casting the polymer film from solution with no subsequent processing or heat treatment required. Electrical characterization reveals diode behavior with rectification ratios greater than 104. We propose that tunneling of electrons from the recitifying metal contact into the gap states of the positive polaron majority carriers dominates current flow and provides the mechanism for light emission.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.105039</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Optoelectronic devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>Applied physics letters, 1991-05, Vol.58 (18), p.1982-1984</ispartof><rights>1991 INIST-CNRS</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c388t-839641b98db9d3950c5742d2cc28f73bce6646dad3fcc1297bdd2e3ae81dfefb3</citedby><cites>FETCH-LOGICAL-c388t-839641b98db9d3950c5742d2cc28f73bce6646dad3fcc1297bdd2e3ae81dfefb3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=19637539$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>BRAUN, D</creatorcontrib><creatorcontrib>HEEGER, A. J</creatorcontrib><title>Visible light emission from semiconducting polymer diodes</title><title>Applied physics letters</title><description>We report visible light emission from Shottky diodes made from semiconducting polymers, confirming the discovery by the Cambridge group [Nature 347, 539 (1990)]. Our results demonstrate that light-emitting diodes can be fabricated by casting the polymer film from solution with no subsequent processing or heat treatment required. Electrical characterization reveals diode behavior with rectification ratios greater than 104. We propose that tunneling of electrons from the recitifying metal contact into the gap states of the positive polaron majority carriers dominates current flow and provides the mechanism for light emission.</description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Optoelectronic devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1991</creationdate><recordtype>article</recordtype><recordid>eNpFkEtLAzEYRYMoWKvgT5iN4mY0jyaZLKVYFQpu1G3I5FEjmUnNN1303xtpwdXlwuFwuQhdE3xPsGAPpAbHTJ2gGcFStoyQ7hTNMMasFYqTc3QB8F0rp4zNkPqMEPvkmxQ3X1PjhwgQ89iEkocGarV5dDs7xXHTbHPaD740Lmbn4RKdBZPAXx1zjj5WT-_Ll3b99vy6fFy3lnXd1HZMiQXpVed65Zji2HK5oI5aS7sgWW-9EAvhjGPBWkKV7J2jnhnfERd86Nkc3R6825J_dh4mXTdan5IZfd6BppxTIbGs4N0BtCUDFB_0tsTBlL0mWP99o4k-fFPRm6PTgDUpFDPaCP-8Ekzyyv0CPqFjig</recordid><startdate>19910506</startdate><enddate>19910506</enddate><creator>BRAUN, D</creator><creator>HEEGER, A. J</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>19910506</creationdate><title>Visible light emission from semiconducting polymer diodes</title><author>BRAUN, D ; HEEGER, A. J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c388t-839641b98db9d3950c5742d2cc28f73bce6646dad3fcc1297bdd2e3ae81dfefb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1991</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Optoelectronic devices</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>BRAUN, D</creatorcontrib><creatorcontrib>HEEGER, A. J</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>BRAUN, D</au><au>HEEGER, A. J</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Visible light emission from semiconducting polymer diodes</atitle><jtitle>Applied physics letters</jtitle><date>1991-05-06</date><risdate>1991</risdate><volume>58</volume><issue>18</issue><spage>1982</spage><epage>1984</epage><pages>1982-1984</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We report visible light emission from Shottky diodes made from semiconducting polymers, confirming the discovery by the Cambridge group [Nature 347, 539 (1990)]. Our results demonstrate that light-emitting diodes can be fabricated by casting the polymer film from solution with no subsequent processing or heat treatment required. Electrical characterization reveals diode behavior with rectification ratios greater than 104. We propose that tunneling of electrons from the recitifying metal contact into the gap states of the positive polaron majority carriers dominates current flow and provides the mechanism for light emission.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.105039</doi><tpages>3</tpages><oa>free_for_read</oa></addata></record>
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subjects Applied sciences
Electronics
Exact sciences and technology
Optoelectronic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title Visible light emission from semiconducting polymer diodes
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-26T16%3A17%3A31IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Visible%20light%20emission%20from%20semiconducting%20polymer%20diodes&rft.jtitle=Applied%20physics%20letters&rft.au=BRAUN,%20D&rft.date=1991-05-06&rft.volume=58&rft.issue=18&rft.spage=1982&rft.epage=1984&rft.pages=1982-1984&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.105039&rft_dat=%3Cproquest_cross%3E25526707%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=25526707&rft_id=info:pmid/&rfr_iscdi=true