Temperature control of silicon-germanium alloy epitaxial growth on silicon substrates by infrared transmission

We report the application of the technique of infrared transmission to measure the temperature of silicon wafers during the growth of silicon-germanium alloy heteroepitaxial layers in a rapid thermal processing system. The silicon-germanium alloy layers have negligible absorption at 1.3 and 1.55 μm...

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Veröffentlicht in:	Journal of applied physics 1991, Vol.69 (1), p.542-544
Hauptverfasser:	STURM, J. C, GARONE, P. M, SCHWARTZ, P. V
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Testing, measurement, noise and reliability
Online-Zugang:	Volltext
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