The deduction of ballistic atomic mixing rates from high fluence ion implant collection depth distributions

An analysis is made, based upon differential atomic transport fluxes in a substrate resulting from implant ion collection, ballistically stimulated atomic relocation or mixing and surface sputtering, of the evolution of equivalent atom concentration-depth profiles in a substrate as a function of inc...

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Veröffentlicht in:	Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 1989-04, Vol.36 (4), p.404-411
Hauptverfasser:	Carter, G., Nobes, M.J., Katardjiev, I.V.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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