Technology of superconducting thin films on Si, SiO sub(2), and Si sub(3)N sub(4) for vacuum microelectronics

Technology of superconducting thin films on Si, SiO sub(2), and Si sub(3)N sub(4) for vacuum microelectronics

A study of YBaCuO films on Si, SiO sub(2), and Si sub(3)N sub(4) substrates demonstrates that rapid thermal processing can suppress the film-substrate reaction during the post-growth oxygen annealing. With the onset of superconductivity above 95 K, YBaCuO films annealed for 6 s at 940 degree C show...

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Veröffentlicht in:IEEE transactions on electron devices 1989-01, Vol.36 (11), p.2693-2696
Hauptverfasser: Aslam, M, Soltis, R E, Logothetis, E M, Chase, R E, Wenger, L E, Chen, J T
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container_end_page 2696
container_issue 11
container_start_page 2693
container_title IEEE transactions on electron devices
container_volume 36
creator Aslam, M
Soltis, R E
Logothetis, E M
Chase, R E
Wenger, L E
Chen, J T
description A study of YBaCuO films on Si, SiO sub(2), and Si sub(3)N sub(4) substrates demonstrates that rapid thermal processing can suppress the film-substrate reaction during the post-growth oxygen annealing. With the onset of superconductivity above 95 K, YBaCuO films annealed for 6 s at 940 degree C show T sub(c)(0) above 70 K for the SiO sub(2)-Si substrate. These results as well as results of others suggest that high T sub(c) oxide superconductors could be used as electron sources or as cold emitters, gates, and collectors.
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title Technology of superconducting thin films on Si, SiO sub(2), and Si sub(3)N sub(4) for vacuum microelectronics
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