Preparation of hollow metal–organic frameworks via epitaxial protection and selective etching

Hollow metal–organic frameworks (MOFs) with only a shell may be used for efficient catalysis. In this work, a general sequential synthesis was employed to successfully create Hf-based hollow MOFs, such as UiO-66, MOF-808, and PCN-223. Etchants including monocarboxylic acids and H 2 O are required to...

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Veröffentlicht in:Faraday discussions 2021-10, Vol.231, p.181-193
Hauptverfasser: Chen, Peican, Chen, Jiawei, Hu, Xuefu, Wang, Cheng
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Chen, Jiawei
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Wang, Cheng
description Hollow metal–organic frameworks (MOFs) with only a shell may be used for efficient catalysis. In this work, a general sequential synthesis was employed to successfully create Hf-based hollow MOFs, such as UiO-66, MOF-808, and PCN-223. Etchants including monocarboxylic acids and H 2 O are required to remove the interior of the MOFs to form hollow structures, while the different stability of the interior and surface of the MOFs partly resulting from surface epitaxy protection was responsible for the selective etching. With these insights, scale-up of hollow octahedral UiO-66 was realized. This work paves a way to rationally design hollow MOFs.
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_2548416623</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2548416623</sourcerecordid><originalsourceid>FETCH-LOGICAL-c292t-a234fde9f24caec4d16733b3ad14a1d0527f545d541ace3a0be9955687f728ae3</originalsourceid><addsrcrecordid>eNpdkD1Ow0AQhS0EEiHQcIKVaBCSYf9tlyghgIgEBdTWZD2bOHG8ZtdJoOMO3JCT4CRUVDOj-d7T04uic0avGRXZTcFsQSllenEQ9ZjQMlYySw-3u8pirSU9jk5CmHeM7r69KH_x2ICHtnQ1cZbMXFW5DVliC9XP17fzU6hLQ6yHJW6cXwSyLoFgU7bwUUJFGu9aNDs11AUJWG2vNRJszaysp6fRkYUq4Nnf7Edvo7vXwUM8fr5_HNyOY8Mz3sbAhbQFZpZLA2hkwXQixERAwSSwgiqeWCVVoSQDgwLoBLNMKZ0mNuEpoOhHl3vfLtD7CkObL8tgsKqgRrcKOVcylUxrLjr04h86dytfd-k6KuVUaU1VR13tKeNdCB5t3vhyCf4zZzTfdp0P2Wi46_pJ_AK-5XOL</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2582056605</pqid></control><display><type>article</type><title>Preparation of hollow metal–organic frameworks via epitaxial protection and selective etching</title><source>Royal Society Of Chemistry Journals 2008-</source><source>Alma/SFX Local Collection</source><creator>Chen, Peican ; Chen, Jiawei ; Hu, Xuefu ; Wang, Cheng</creator><creatorcontrib>Chen, Peican ; Chen, Jiawei ; Hu, Xuefu ; Wang, Cheng</creatorcontrib><description>Hollow metal–organic frameworks (MOFs) with only a shell may be used for efficient catalysis. In this work, a general sequential synthesis was employed to successfully create Hf-based hollow MOFs, such as UiO-66, MOF-808, and PCN-223. Etchants including monocarboxylic acids and H 2 O are required to remove the interior of the MOFs to form hollow structures, while the different stability of the interior and surface of the MOFs partly resulting from surface epitaxy protection was responsible for the selective etching. With these insights, scale-up of hollow octahedral UiO-66 was realized. This work paves a way to rationally design hollow MOFs.</description><identifier>ISSN: 1359-6640</identifier><identifier>EISSN: 1364-5498</identifier><identifier>DOI: 10.1039/d1fd00016k</identifier><language>eng</language><publisher>Cambridge: Royal Society of Chemistry</publisher><subject>Etchants ; Etching ; Metal-organic frameworks ; Surface stability</subject><ispartof>Faraday discussions, 2021-10, Vol.231, p.181-193</ispartof><rights>Copyright Royal Society of Chemistry 2021</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c292t-a234fde9f24caec4d16733b3ad14a1d0527f545d541ace3a0be9955687f728ae3</citedby><cites>FETCH-LOGICAL-c292t-a234fde9f24caec4d16733b3ad14a1d0527f545d541ace3a0be9955687f728ae3</cites><orcidid>0000-0002-7906-8061</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Chen, Peican</creatorcontrib><creatorcontrib>Chen, Jiawei</creatorcontrib><creatorcontrib>Hu, Xuefu</creatorcontrib><creatorcontrib>Wang, Cheng</creatorcontrib><title>Preparation of hollow metal–organic frameworks via epitaxial protection and selective etching</title><title>Faraday discussions</title><description>Hollow metal–organic frameworks (MOFs) with only a shell may be used for efficient catalysis. In this work, a general sequential synthesis was employed to successfully create Hf-based hollow MOFs, such as UiO-66, MOF-808, and PCN-223. Etchants including monocarboxylic acids and H 2 O are required to remove the interior of the MOFs to form hollow structures, while the different stability of the interior and surface of the MOFs partly resulting from surface epitaxy protection was responsible for the selective etching. With these insights, scale-up of hollow octahedral UiO-66 was realized. This work paves a way to rationally design hollow MOFs.</description><subject>Etchants</subject><subject>Etching</subject><subject>Metal-organic frameworks</subject><subject>Surface stability</subject><issn>1359-6640</issn><issn>1364-5498</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNpdkD1Ow0AQhS0EEiHQcIKVaBCSYf9tlyghgIgEBdTWZD2bOHG8ZtdJoOMO3JCT4CRUVDOj-d7T04uic0avGRXZTcFsQSllenEQ9ZjQMlYySw-3u8pirSU9jk5CmHeM7r69KH_x2ICHtnQ1cZbMXFW5DVliC9XP17fzU6hLQ6yHJW6cXwSyLoFgU7bwUUJFGu9aNDs11AUJWG2vNRJszaysp6fRkYUq4Nnf7Edvo7vXwUM8fr5_HNyOY8Mz3sbAhbQFZpZLA2hkwXQixERAwSSwgiqeWCVVoSQDgwLoBLNMKZ0mNuEpoOhHl3vfLtD7CkObL8tgsKqgRrcKOVcylUxrLjr04h86dytfd-k6KuVUaU1VR13tKeNdCB5t3vhyCf4zZzTfdp0P2Wi46_pJ_AK-5XOL</recordid><startdate>20211015</startdate><enddate>20211015</enddate><creator>Chen, Peican</creator><creator>Chen, Jiawei</creator><creator>Hu, Xuefu</creator><creator>Wang, Cheng</creator><general>Royal Society of Chemistry</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>7X8</scope><orcidid>https://orcid.org/0000-0002-7906-8061</orcidid></search><sort><creationdate>20211015</creationdate><title>Preparation of hollow metal–organic frameworks via epitaxial protection and selective etching</title><author>Chen, Peican ; Chen, Jiawei ; Hu, Xuefu ; Wang, Cheng</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c292t-a234fde9f24caec4d16733b3ad14a1d0527f545d541ace3a0be9955687f728ae3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Etchants</topic><topic>Etching</topic><topic>Metal-organic frameworks</topic><topic>Surface stability</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chen, Peican</creatorcontrib><creatorcontrib>Chen, Jiawei</creatorcontrib><creatorcontrib>Hu, Xuefu</creatorcontrib><creatorcontrib>Wang, Cheng</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>MEDLINE - Academic</collection><jtitle>Faraday discussions</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chen, Peican</au><au>Chen, Jiawei</au><au>Hu, Xuefu</au><au>Wang, Cheng</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Preparation of hollow metal–organic frameworks via epitaxial protection and selective etching</atitle><jtitle>Faraday discussions</jtitle><date>2021-10-15</date><risdate>2021</risdate><volume>231</volume><spage>181</spage><epage>193</epage><pages>181-193</pages><issn>1359-6640</issn><eissn>1364-5498</eissn><abstract>Hollow metal–organic frameworks (MOFs) with only a shell may be used for efficient catalysis. In this work, a general sequential synthesis was employed to successfully create Hf-based hollow MOFs, such as UiO-66, MOF-808, and PCN-223. Etchants including monocarboxylic acids and H 2 O are required to remove the interior of the MOFs to form hollow structures, while the different stability of the interior and surface of the MOFs partly resulting from surface epitaxy protection was responsible for the selective etching. With these insights, scale-up of hollow octahedral UiO-66 was realized. This work paves a way to rationally design hollow MOFs.</abstract><cop>Cambridge</cop><pub>Royal Society of Chemistry</pub><doi>10.1039/d1fd00016k</doi><tpages>13</tpages><orcidid>https://orcid.org/0000-0002-7906-8061</orcidid></addata></record>
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source Royal Society Of Chemistry Journals 2008-; Alma/SFX Local Collection
subjects Etchants
Etching
Metal-organic frameworks
Surface stability
title Preparation of hollow metal–organic frameworks via epitaxial protection and selective etching
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-24T19%3A35%3A47IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Preparation%20of%20hollow%20metal%E2%80%93organic%20frameworks%20via%20epitaxial%20protection%20and%20selective%20etching&rft.jtitle=Faraday%20discussions&rft.au=Chen,%20Peican&rft.date=2021-10-15&rft.volume=231&rft.spage=181&rft.epage=193&rft.pages=181-193&rft.issn=1359-6640&rft.eissn=1364-5498&rft_id=info:doi/10.1039/d1fd00016k&rft_dat=%3Cproquest_cross%3E2548416623%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2582056605&rft_id=info:pmid/&rfr_iscdi=true