Substrate-induced peak in the photoluminescence of heavily doped epitaxial GaAs

A peak at 1.38 eV is observed in the 300-K photoluminescence of n+ and p+ epitaxial GaAs. This peak appears as a shoulder of the principal band-to-band emission. The shoulder is an artifact produced by the substrate and should not be interpreted as an additional optical transition. It is demonstrate...

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Veröffentlicht in:	Journal of applied physics 1989-02, Vol.65 (4), p.1788-1790
Hauptverfasser:	SZMYD, D. M, MAJERFELD, A
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Photoluminescence Physics
Online-Zugang:	Volltext
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