Equipment modelling of CVD and etching
This paper presents results of equipment simulation giving applications of the fluid-dynamic solution to three commonly used reactors in the semiconductor industry — Tungsten CVD, Aluminum plasma etching, and Poly LPCVD. The results obtained include the determination of three-dimensional profiles fo...
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| Veröffentlicht in: | Microelectronic engineering 1991-02, Vol.10 (3), p.217-232 |
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| container_title | Microelectronic engineering |
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| creator | Ulacia F., J.Ignacio Werner, Christoph |
| description | This paper presents results of equipment simulation giving applications of the fluid-dynamic solution to three commonly used reactors in the semiconductor industry — Tungsten CVD, Aluminum plasma etching, and Poly LPCVD. The results obtained include the determination of three-dimensional profiles for pressure, temperature, velocity, concentration of different chemical species, etch rates, deposition rates and uniformity over the wafer. This simulation technique is an important tool for equipment and process optimization by both the equipment suppliers and process engineers, because it allows a better visualization of the variables that control the process and allows a fast estimation of how changes on the process parameters or hardware configuration influence the results. |
| doi_str_mv | 10.1016/0167-9317(91)90024-8 |
| format | Article |
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The results obtained include the determination of three-dimensional profiles for pressure, temperature, velocity, concentration of different chemical species, etch rates, deposition rates and uniformity over the wafer. This simulation technique is an important tool for equipment and process optimization by both the equipment suppliers and process engineers, because it allows a better visualization of the variables that control the process and allows a fast estimation of how changes on the process parameters or hardware configuration influence the results.</description><identifier>ISSN: 0167-9317</identifier><identifier>EISSN: 1873-5568</identifier><identifier>DOI: 10.1016/0167-9317(91)90024-8</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>aluminum plasma etching ; equipment optimization ; Equipment simulation ; fluid dynamical approach ; numerical simulation ; poly LPCVD ; process optimization ; tungsten CVD</subject><ispartof>Microelectronic engineering, 1991-02, Vol.10 (3), p.217-232</ispartof><rights>1991</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c315t-fa1052ace5e20f9969a05ab8403576cf86954ce4721577543ea40c53cdf6b9bb3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/0167-9317(91)90024-8$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids></links><search><creatorcontrib>Ulacia F., J.Ignacio</creatorcontrib><creatorcontrib>Werner, Christoph</creatorcontrib><title>Equipment modelling of CVD and etching</title><title>Microelectronic engineering</title><description>This paper presents results of equipment simulation giving applications of the fluid-dynamic solution to three commonly used reactors in the semiconductor industry — Tungsten CVD, Aluminum plasma etching, and Poly LPCVD. The results obtained include the determination of three-dimensional profiles for pressure, temperature, velocity, concentration of different chemical species, etch rates, deposition rates and uniformity over the wafer. This simulation technique is an important tool for equipment and process optimization by both the equipment suppliers and process engineers, because it allows a better visualization of the variables that control the process and allows a fast estimation of how changes on the process parameters or hardware configuration influence the results.</description><subject>aluminum plasma etching</subject><subject>equipment optimization</subject><subject>Equipment simulation</subject><subject>fluid dynamical approach</subject><subject>numerical simulation</subject><subject>poly LPCVD</subject><subject>process optimization</subject><subject>tungsten CVD</subject><issn>0167-9317</issn><issn>1873-5568</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1991</creationdate><recordtype>article</recordtype><recordid>eNqNkE1LAzEQhoMoWKv_wMOeih5Wk833RZBaP6DgRb2GbHaike5Hk63gvze14lE8DMMMz_sy8yJ0SvAFwURc5pKlpkSeaXKuMa5YqfbQhChJS86F2keTX-QQHaX0jvPMsJqg2WK9CUML3Vi0fQOrVehei94X85ebwnZNAaN7y6tjdODtKsHJT5-i59vF0_y-XD7ePcyvl6WjhI-ltwTzyjrgUGGvtdAWc1srhimXwnklNGcOmKwIl5IzCpZhx6lrvKh1XdMpmu18h9ivN5BG04bk8lm2g36TTMWpZkLr_4FYiQyyHehin1IEb4YYWhs_DcFmm57ZRmO20RhNzHd6RmXZ1U4G-duPANEkF6Bz0IQIbjRNH_42-AJxPnPy</recordid><startdate>19910201</startdate><enddate>19910201</enddate><creator>Ulacia F., J.Ignacio</creator><creator>Werner, Christoph</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>7SP</scope><scope>L7M</scope></search><sort><creationdate>19910201</creationdate><title>Equipment modelling of CVD and etching</title><author>Ulacia F., J.Ignacio ; Werner, Christoph</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c315t-fa1052ace5e20f9969a05ab8403576cf86954ce4721577543ea40c53cdf6b9bb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1991</creationdate><topic>aluminum plasma etching</topic><topic>equipment optimization</topic><topic>Equipment simulation</topic><topic>fluid dynamical approach</topic><topic>numerical simulation</topic><topic>poly LPCVD</topic><topic>process optimization</topic><topic>tungsten CVD</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ulacia F., J.Ignacio</creatorcontrib><creatorcontrib>Werner, Christoph</creatorcontrib><collection>CrossRef</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Electronics & Communications Abstracts</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Microelectronic engineering</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ulacia F., J.Ignacio</au><au>Werner, Christoph</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Equipment modelling of CVD and etching</atitle><jtitle>Microelectronic engineering</jtitle><date>1991-02-01</date><risdate>1991</risdate><volume>10</volume><issue>3</issue><spage>217</spage><epage>232</epage><pages>217-232</pages><issn>0167-9317</issn><eissn>1873-5568</eissn><abstract>This paper presents results of equipment simulation giving applications of the fluid-dynamic solution to three commonly used reactors in the semiconductor industry — Tungsten CVD, Aluminum plasma etching, and Poly LPCVD. The results obtained include the determination of three-dimensional profiles for pressure, temperature, velocity, concentration of different chemical species, etch rates, deposition rates and uniformity over the wafer. This simulation technique is an important tool for equipment and process optimization by both the equipment suppliers and process engineers, because it allows a better visualization of the variables that control the process and allows a fast estimation of how changes on the process parameters or hardware configuration influence the results.</abstract><pub>Elsevier B.V</pub><doi>10.1016/0167-9317(91)90024-8</doi><tpages>16</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0167-9317 |
| ispartof | Microelectronic engineering, 1991-02, Vol.10 (3), p.217-232 |
| issn | 0167-9317 1873-5568 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_25394699 |
| source | Elsevier ScienceDirect Journals Complete |
| subjects | aluminum plasma etching equipment optimization Equipment simulation fluid dynamical approach numerical simulation poly LPCVD process optimization tungsten CVD |
| title | Equipment modelling of CVD and etching |
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