A Q-band monolithic balanced resistive HEMT mixer using CPW/slotline balun

A Q-band balanced, resistive high-electron-mobility-transistor (HEMT) mixer has been developed for integration in monolithic millimeter-wave receivers. The mixer consists of two AlGaAs/GaAs HEMTs, a coplanar-waveguide (CPW)-to-slotline local oscillator (LO) balun, and an active IF balun. CPWs are us...

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Veröffentlicht in:	IEEE journal of solid-state circuits 1991-10, Vol.26 (10), p.1389-1394
Hauptverfasser:	TZU-HUNG CHEN, THUY-NHUNG TON, GEE SAMUEL DOW, NAKANO, K, LIU, L. C. T, BERENZ, J
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Sprache:	eng
Schlagworte:	Applied sciences Electric, optical and optoelectronic circuits Electronics Exact sciences and technology
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container_end_page	1394
container_issue	10
container_start_page	1389
container_title	IEEE journal of solid-state circuits
container_volume	26
creator	TZU-HUNG CHEN THUY-NHUNG TON GEE SAMUEL DOW NAKANO, K LIU, L. C. T BERENZ, J
description	A Q-band balanced, resistive high-electron-mobility-transistor (HEMT) mixer has been developed for integration in monolithic millimeter-wave receivers. The mixer consists of two AlGaAs/GaAs HEMTs, a coplanar-waveguide (CPW)-to-slotline local oscillator (LO) balun, and an active IF balun. CPWs are used to eliminate the backside or via-hole process step, which increases the circuit yield and shortens the processing time. The conversion loss of the mixer while downconverting a 42-46-GHz RF to a 2.3-3.2-GHz IF is between 4 and 8 dB using an LO drive of 14 dBm. A 17.5-dBm input two-tone third-order intermodulation intercept point is achieved with an LO drive of 10.5 dBm, while a 5.5-dBm input, 1-dB compression point can be achieved with an LO drive of 14 dBm. This is the first reported monolithic CPW resistive HEMT mixer operating at Q-band frequencies. (I.E.)
doi_str_mv	10.1109/4.90092
format	Article
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C. T ; BERENZ, J</creator><creatorcontrib>TZU-HUNG CHEN ; THUY-NHUNG TON ; GEE SAMUEL DOW ; NAKANO, K ; LIU, L. C. T ; BERENZ, J</creatorcontrib><description>A Q-band balanced, resistive high-electron-mobility-transistor (HEMT) mixer has been developed for integration in monolithic millimeter-wave receivers. The mixer consists of two AlGaAs/GaAs HEMTs, a coplanar-waveguide (CPW)-to-slotline local oscillator (LO) balun, and an active IF balun. CPWs are used to eliminate the backside or via-hole process step, which increases the circuit yield and shortens the processing time. The conversion loss of the mixer while downconverting a 42-46-GHz RF to a 2.3-3.2-GHz IF is between 4 and 8 dB using an LO drive of 14 dBm. A 17.5-dBm input two-tone third-order intermodulation intercept point is achieved with an LO drive of 10.5 dBm, while a 5.5-dBm input, 1-dB compression point can be achieved with an LO drive of 14 dBm. 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C. T</creatorcontrib><creatorcontrib>BERENZ, J</creatorcontrib><title>A Q-band monolithic balanced resistive HEMT mixer using CPW/slotline balun</title><title>IEEE journal of solid-state circuits</title><description>A Q-band balanced, resistive high-electron-mobility-transistor (HEMT) mixer has been developed for integration in monolithic millimeter-wave receivers. The mixer consists of two AlGaAs/GaAs HEMTs, a coplanar-waveguide (CPW)-to-slotline local oscillator (LO) balun, and an active IF balun. CPWs are used to eliminate the backside or via-hole process step, which increases the circuit yield and shortens the processing time. The conversion loss of the mixer while downconverting a 42-46-GHz RF to a 2.3-3.2-GHz IF is between 4 and 8 dB using an LO drive of 14 dBm. A 17.5-dBm input two-tone third-order intermodulation intercept point is achieved with an LO drive of 10.5 dBm, while a 5.5-dBm input, 1-dB compression point can be achieved with an LO drive of 14 dBm. This is the first reported monolithic CPW resistive HEMT mixer operating at Q-band frequencies. 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T</au><au>BERENZ, J</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Q-band monolithic balanced resistive HEMT mixer using CPW/slotline balun</atitle><jtitle>IEEE journal of solid-state circuits</jtitle><date>1991-10-01</date><risdate>1991</risdate><volume>26</volume><issue>10</issue><spage>1389</spage><epage>1394</epage><pages>1389-1394</pages><issn>0018-9200</issn><eissn>1558-173X</eissn><coden>IJSCBC</coden><abstract>A Q-band balanced, resistive high-electron-mobility-transistor (HEMT) mixer has been developed for integration in monolithic millimeter-wave receivers. The mixer consists of two AlGaAs/GaAs HEMTs, a coplanar-waveguide (CPW)-to-slotline local oscillator (LO) balun, and an active IF balun. CPWs are used to eliminate the backside or via-hole process step, which increases the circuit yield and shortens the processing time. The conversion loss of the mixer while downconverting a 42-46-GHz RF to a 2.3-3.2-GHz IF is between 4 and 8 dB using an LO drive of 14 dBm. A 17.5-dBm input two-tone third-order intermodulation intercept point is achieved with an LO drive of 10.5 dBm, while a 5.5-dBm input, 1-dB compression point can be achieved with an LO drive of 14 dBm. This is the first reported monolithic CPW resistive HEMT mixer operating at Q-band frequencies. (I.E.)</abstract><cop>New York, NY</cop><pub>Institute of Electrical and Electronics Engineers</pub><doi>10.1109/4.90092</doi><tpages>6</tpages></addata></record>
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source	IEEE Electronic Library (IEL)
subjects	Applied sciences Electric, optical and optoelectronic circuits Electronics Exact sciences and technology
title	A Q-band monolithic balanced resistive HEMT mixer using CPW/slotline balun
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