Photoinduced paramagnetic centers in amorphous silicon oxynitride
Room-temperature metastable paramagnetic point defects are created in plasma-enhanced chemical vapor deposited silicon oxynitride films by exposing the films to ultraviolet and vacuum ultraviolet illumination. We compare the response of films with low, intermediate, and high oxygen content. The defe...
Gespeichert in:
Veröffentlicht in: | Journal of applied physics 1991-11, Vol.70 (9), p.4969-4972 |
---|---|
Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | 4972 |
---|---|
container_issue | 9 |
container_start_page | 4969 |
container_title | Journal of applied physics |
container_volume | 70 |
creator | YOUNT, J. T KRAUS, G. T LENAHAN, P. M KRICK, D. T |
description | Room-temperature metastable paramagnetic point defects are created in plasma-enhanced chemical vapor deposited silicon oxynitride films by exposing the films to ultraviolet and vacuum ultraviolet illumination. We compare the response of films with low, intermediate, and high oxygen content. The defects include unpaired electrons on silicons bonded to nitrogen atoms (K centers), unpaired electrons on bridging nitrogens, and what appear to be overcoordinated nitrogen centers. |
doi_str_mv | 10.1063/1.349024 |
format | Article |
fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_25359519</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>25359519</sourcerecordid><originalsourceid>FETCH-LOGICAL-c351t-a76bc92cf8bc98368a0a70a1deecc4fc8477f06c3c19e387f0956ff803b3f99f3</originalsourceid><addsrcrecordid>eNo9kE1LAzEURYMoWKvgT5iFiJupL5PJJFmW4hcUdKHrkL5JbGQmGZMp2H_vSIurexeHw-USck1hQaFh93TBagVVfUJmFKQqBedwSmYAFS2lEuqcXOT8BUCpZGpGlm_bOEYf2h3athhMMr35DHb0WKANo0258KEwfUzDNu5ykX3nMYYi_uyDH5Nv7SU5c6bL9uqYc_Lx-PC-ei7Xr08vq-W6RMbpWBrRbFBV6OQUkjXSgBFgaGstYu1Q1kI4aJAhVZbJqSveOCeBbZhTyrE5uT14hxS_dzaPuvcZbdeZYKdluuKMK07VBN4dQEwx52SdHpLvTdprCvrvI0314aMJvTk6TUbTuWQC-vzPc5BVJSj7BRYxZnw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>25359519</pqid></control><display><type>article</type><title>Photoinduced paramagnetic centers in amorphous silicon oxynitride</title><source>AIP Digital Archive</source><creator>YOUNT, J. T ; KRAUS, G. T ; LENAHAN, P. M ; KRICK, D. T</creator><creatorcontrib>YOUNT, J. T ; KRAUS, G. T ; LENAHAN, P. M ; KRICK, D. T</creatorcontrib><description>Room-temperature metastable paramagnetic point defects are created in plasma-enhanced chemical vapor deposited silicon oxynitride films by exposing the films to ultraviolet and vacuum ultraviolet illumination. We compare the response of films with low, intermediate, and high oxygen content. The defects include unpaired electrons on silicons bonded to nitrogen atoms (K centers), unpaired electrons on bridging nitrogens, and what appear to be overcoordinated nitrogen centers.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.349024</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Woodbury, NY: American Institute of Physics</publisher><subject>Color centers and other defects ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electron paramagnetic resonance and relaxation ; Exact sciences and technology ; Magnetic resonances and relaxations in condensed matter, mössbauer effect ; Physics</subject><ispartof>Journal of applied physics, 1991-11, Vol.70 (9), p.4969-4972</ispartof><rights>1992 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c351t-a76bc92cf8bc98368a0a70a1deecc4fc8477f06c3c19e387f0956ff803b3f99f3</citedby><cites>FETCH-LOGICAL-c351t-a76bc92cf8bc98368a0a70a1deecc4fc8477f06c3c19e387f0956ff803b3f99f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=5082271$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>YOUNT, J. T</creatorcontrib><creatorcontrib>KRAUS, G. T</creatorcontrib><creatorcontrib>LENAHAN, P. M</creatorcontrib><creatorcontrib>KRICK, D. T</creatorcontrib><title>Photoinduced paramagnetic centers in amorphous silicon oxynitride</title><title>Journal of applied physics</title><description>Room-temperature metastable paramagnetic point defects are created in plasma-enhanced chemical vapor deposited silicon oxynitride films by exposing the films to ultraviolet and vacuum ultraviolet illumination. We compare the response of films with low, intermediate, and high oxygen content. The defects include unpaired electrons on silicons bonded to nitrogen atoms (K centers), unpaired electrons on bridging nitrogens, and what appear to be overcoordinated nitrogen centers.</description><subject>Color centers and other defects</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electron paramagnetic resonance and relaxation</subject><subject>Exact sciences and technology</subject><subject>Magnetic resonances and relaxations in condensed matter, mössbauer effect</subject><subject>Physics</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1991</creationdate><recordtype>article</recordtype><recordid>eNo9kE1LAzEURYMoWKvgT5iFiJupL5PJJFmW4hcUdKHrkL5JbGQmGZMp2H_vSIurexeHw-USck1hQaFh93TBagVVfUJmFKQqBedwSmYAFS2lEuqcXOT8BUCpZGpGlm_bOEYf2h3athhMMr35DHb0WKANo0258KEwfUzDNu5ykX3nMYYi_uyDH5Nv7SU5c6bL9uqYc_Lx-PC-ei7Xr08vq-W6RMbpWBrRbFBV6OQUkjXSgBFgaGstYu1Q1kI4aJAhVZbJqSveOCeBbZhTyrE5uT14hxS_dzaPuvcZbdeZYKdluuKMK07VBN4dQEwx52SdHpLvTdprCvrvI0314aMJvTk6TUbTuWQC-vzPc5BVJSj7BRYxZnw</recordid><startdate>19911101</startdate><enddate>19911101</enddate><creator>YOUNT, J. T</creator><creator>KRAUS, G. T</creator><creator>LENAHAN, P. M</creator><creator>KRICK, D. T</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>19911101</creationdate><title>Photoinduced paramagnetic centers in amorphous silicon oxynitride</title><author>YOUNT, J. T ; KRAUS, G. T ; LENAHAN, P. M ; KRICK, D. T</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c351t-a76bc92cf8bc98368a0a70a1deecc4fc8477f06c3c19e387f0956ff803b3f99f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1991</creationdate><topic>Color centers and other defects</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electron paramagnetic resonance and relaxation</topic><topic>Exact sciences and technology</topic><topic>Magnetic resonances and relaxations in condensed matter, mössbauer effect</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>YOUNT, J. T</creatorcontrib><creatorcontrib>KRAUS, G. T</creatorcontrib><creatorcontrib>LENAHAN, P. M</creatorcontrib><creatorcontrib>KRICK, D. T</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>YOUNT, J. T</au><au>KRAUS, G. T</au><au>LENAHAN, P. M</au><au>KRICK, D. T</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Photoinduced paramagnetic centers in amorphous silicon oxynitride</atitle><jtitle>Journal of applied physics</jtitle><date>1991-11-01</date><risdate>1991</risdate><volume>70</volume><issue>9</issue><spage>4969</spage><epage>4972</epage><pages>4969-4972</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>Room-temperature metastable paramagnetic point defects are created in plasma-enhanced chemical vapor deposited silicon oxynitride films by exposing the films to ultraviolet and vacuum ultraviolet illumination. We compare the response of films with low, intermediate, and high oxygen content. The defects include unpaired electrons on silicons bonded to nitrogen atoms (K centers), unpaired electrons on bridging nitrogens, and what appear to be overcoordinated nitrogen centers.</abstract><cop>Woodbury, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.349024</doi><tpages>4</tpages></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0021-8979 |
ispartof | Journal of applied physics, 1991-11, Vol.70 (9), p.4969-4972 |
issn | 0021-8979 1089-7550 |
language | eng |
recordid | cdi_proquest_miscellaneous_25359519 |
source | AIP Digital Archive |
subjects | Color centers and other defects Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron paramagnetic resonance and relaxation Exact sciences and technology Magnetic resonances and relaxations in condensed matter, mössbauer effect Physics |
title | Photoinduced paramagnetic centers in amorphous silicon oxynitride |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-03T09%3A32%3A21IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Photoinduced%20paramagnetic%20centers%20in%20amorphous%20silicon%20oxynitride&rft.jtitle=Journal%20of%20applied%20physics&rft.au=YOUNT,%20J.%20T&rft.date=1991-11-01&rft.volume=70&rft.issue=9&rft.spage=4969&rft.epage=4972&rft.pages=4969-4972&rft.issn=0021-8979&rft.eissn=1089-7550&rft.coden=JAPIAU&rft_id=info:doi/10.1063/1.349024&rft_dat=%3Cproquest_cross%3E25359519%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=25359519&rft_id=info:pmid/&rfr_iscdi=true |