Photoinduced paramagnetic centers in amorphous silicon oxynitride

Room-temperature metastable paramagnetic point defects are created in plasma-enhanced chemical vapor deposited silicon oxynitride films by exposing the films to ultraviolet and vacuum ultraviolet illumination. We compare the response of films with low, intermediate, and high oxygen content. The defe...

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Veröffentlicht in:Journal of applied physics 1991-11, Vol.70 (9), p.4969-4972
Hauptverfasser: YOUNT, J. T, KRAUS, G. T, LENAHAN, P. M, KRICK, D. T
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container_end_page 4972
container_issue 9
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container_title Journal of applied physics
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creator YOUNT, J. T
KRAUS, G. T
LENAHAN, P. M
KRICK, D. T
description Room-temperature metastable paramagnetic point defects are created in plasma-enhanced chemical vapor deposited silicon oxynitride films by exposing the films to ultraviolet and vacuum ultraviolet illumination. We compare the response of films with low, intermediate, and high oxygen content. The defects include unpaired electrons on silicons bonded to nitrogen atoms (K centers), unpaired electrons on bridging nitrogens, and what appear to be overcoordinated nitrogen centers.
doi_str_mv 10.1063/1.349024
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subjects Color centers and other defects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron paramagnetic resonance and relaxation
Exact sciences and technology
Magnetic resonances and relaxations in condensed matter, mössbauer effect
Physics
title Photoinduced paramagnetic centers in amorphous silicon oxynitride
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