In Situ Synthesis of Silicon Carbide Whiskers from Silicon Nitride Powders
Silicon carbide whiskers were synthesized in situ by direct carbothermal reduction of silicon nitride with graphite in an argon atmosphere. Phase evolution study reveals that the formation of β‐SiC was initiated at 1400° to 1450°C; above 1650°C silicon was formed when carbon was deficient. Neverthel...
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| Veröffentlicht in: | Journal of the American Ceramic Society 1991-07, Vol.74 (7), p.1519-1522 |
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| container_title | Journal of the American Ceramic Society |
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| creator | Wang, Hongyu Fischman, Gary S. |
| description | Silicon carbide whiskers were synthesized in situ by direct carbothermal reduction of silicon nitride with graphite in an argon atmosphere. Phase evolution study reveals that the formation of β‐SiC was initiated at 1400° to 1450°C; above 1650°C silicon was formed when carbon was deficient. Nevertheless, Si3N4 could be completely converted to SiC with molar ratio Si3N4:C = 1:3 at 1650°C. The morphology of the SiC whiskers is needlelike, with lengths and diameters changing with temperature. SiC fibers were produced on the surface of the sample fired at 1550°C with an average diameter of 0.3 μm. No catalyst was used in the syntheses, which minimizes the amount of impurities in the final products. A reaction mechanism involving the decomposition of silicon nitride has been proposed. |
| doi_str_mv | 10.1111/j.1151-2916.1991.tb07134.x |
| format | Article |
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Phase evolution study reveals that the formation of β‐SiC was initiated at 1400° to 1450°C; above 1650°C silicon was formed when carbon was deficient. Nevertheless, Si3N4 could be completely converted to SiC with molar ratio Si3N4:C = 1:3 at 1650°C. The morphology of the SiC whiskers is needlelike, with lengths and diameters changing with temperature. SiC fibers were produced on the surface of the sample fired at 1550°C with an average diameter of 0.3 μm. No catalyst was used in the syntheses, which minimizes the amount of impurities in the final products. A reaction mechanism involving the decomposition of silicon nitride has been proposed.</description><identifier>ISSN: 0002-7820</identifier><identifier>EISSN: 1551-2916</identifier><identifier>DOI: 10.1111/j.1151-2916.1991.tb07134.x</identifier><identifier>CODEN: JACTAW</identifier><language>eng</language><publisher>Oxford, UK: Blackwell Publishing Ltd</publisher><subject>Applied sciences ; Building materials. Ceramics. 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Phase evolution study reveals that the formation of β‐SiC was initiated at 1400° to 1450°C; above 1650°C silicon was formed when carbon was deficient. Nevertheless, Si3N4 could be completely converted to SiC with molar ratio Si3N4:C = 1:3 at 1650°C. The morphology of the SiC whiskers is needlelike, with lengths and diameters changing with temperature. SiC fibers were produced on the surface of the sample fired at 1550°C with an average diameter of 0.3 μm. No catalyst was used in the syntheses, which minimizes the amount of impurities in the final products. A reaction mechanism involving the decomposition of silicon nitride has been proposed.</description><subject>Applied sciences</subject><subject>Building materials. Ceramics. Glasses</subject><subject>Chemical industry and chemicals</subject><subject>Exact sciences and technology</subject><subject>graphite</subject><subject>reactions</subject><subject>Refractory products</subject><subject>silicon carbide</subject><subject>silicon nitride</subject><subject>whiskers</subject><issn>0002-7820</issn><issn>1551-2916</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1991</creationdate><recordtype>article</recordtype><recordid>eNqVkF9LwzAUxYMoOKffoYj41pq_a-uTo8y5MaYwdY8hTROWrWs16dj27U1Z2bsJ5HLzO_dcOADcIxghf57WvjAU4hQNIpSmKGpyGCNCo8MF6CHWoUvQgxDiME4wvAY3zq19i9KE9sB0UgUL0-yCxbFqVsoZF9Ta_5RG1lWQCZubQgXLlXEbZV2gbb0907lpbEs_6n3h4S240qJ06q6rffD1OvrM3sLZ-3iSDWehpISlIRYYFThPmJJC0HiQK0QlwpponGMiZE5o4RkVOSVapjiWgskcJ5AREotYkz54PPn-2Pp3p1zDt8ZJVZaiUvXOccwIxdC_ffB8EkpbO2eV5j_WbIU9cgR5Gx9f8zY-3mbE2_h4Fx8_-OGHbotwUpTaikoad3ZgFKf-etnLSbY3pTr-YwGfDrORZ6m3CE8WxjXqcLYQdsMHMYkZX87H_HuJF-MMMY7IH3T0k-4</recordid><startdate>199107</startdate><enddate>199107</enddate><creator>Wang, Hongyu</creator><creator>Fischman, Gary S.</creator><general>Blackwell Publishing Ltd</general><general>Blackwell</general><scope>BSCLL</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>199107</creationdate><title>In Situ Synthesis of Silicon Carbide Whiskers from Silicon Nitride Powders</title><author>Wang, Hongyu ; Fischman, Gary S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c4359-2a21d2b85ecaa476be14c12f3f2b23acb34d5ec4ab43fc927ca5cb2805337a7f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1991</creationdate><topic>Applied sciences</topic><topic>Building materials. 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Glasses</topic><topic>Chemical industry and chemicals</topic><topic>Exact sciences and technology</topic><topic>graphite</topic><topic>reactions</topic><topic>Refractory products</topic><topic>silicon carbide</topic><topic>silicon nitride</topic><topic>whiskers</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wang, Hongyu</creatorcontrib><creatorcontrib>Fischman, Gary S.</creatorcontrib><collection>Istex</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of the American Ceramic Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wang, Hongyu</au><au>Fischman, Gary S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>In Situ Synthesis of Silicon Carbide Whiskers from Silicon Nitride Powders</atitle><jtitle>Journal of the American Ceramic Society</jtitle><date>1991-07</date><risdate>1991</risdate><volume>74</volume><issue>7</issue><spage>1519</spage><epage>1522</epage><pages>1519-1522</pages><issn>0002-7820</issn><eissn>1551-2916</eissn><coden>JACTAW</coden><abstract>Silicon carbide whiskers were synthesized in situ by direct carbothermal reduction of silicon nitride with graphite in an argon atmosphere. Phase evolution study reveals that the formation of β‐SiC was initiated at 1400° to 1450°C; above 1650°C silicon was formed when carbon was deficient. Nevertheless, Si3N4 could be completely converted to SiC with molar ratio Si3N4:C = 1:3 at 1650°C. The morphology of the SiC whiskers is needlelike, with lengths and diameters changing with temperature. SiC fibers were produced on the surface of the sample fired at 1550°C with an average diameter of 0.3 μm. No catalyst was used in the syntheses, which minimizes the amount of impurities in the final products. A reaction mechanism involving the decomposition of silicon nitride has been proposed.</abstract><cop>Oxford, UK</cop><pub>Blackwell Publishing Ltd</pub><doi>10.1111/j.1151-2916.1991.tb07134.x</doi><tpages>4</tpages></addata></record> |
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| ispartof | Journal of the American Ceramic Society, 1991-07, Vol.74 (7), p.1519-1522 |
| issn | 0002-7820 1551-2916 |
| language | eng |
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| source | Access via Wiley Online Library |
| subjects | Applied sciences Building materials. Ceramics. Glasses Chemical industry and chemicals Exact sciences and technology graphite reactions Refractory products silicon carbide silicon nitride whiskers |
| title | In Situ Synthesis of Silicon Carbide Whiskers from Silicon Nitride Powders |
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