Nonlinear Quantum Conductance of a Lateral Microconstraint in a Heterostructure

Finite source-drain voltage V causes smearing of quantum steps in the I(d) function of microconstraint (d is the diameter of a constraint, I the current through it). The number of steps is restricted by the value n@u similar to = 2E sub(F)/eV, where E sub(F) is the Fermi energy of the 2D electron ga...

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Veröffentlicht in:	Europhysics letters 1989-06, Vol.9 (3), p.263-267
Hauptverfasser:	Glazman, L. I, Khaetskii, A. V
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity phenomena in semiconductors and insulators Electronic transport in condensed matter Exact sciences and technology High-field and nonlinear effects Physics
Online-Zugang:	Volltext
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