Molecular beam epitaxial growth of GaAs and other compound semiconductors
We describe recent progress in the field of molecular beam epitaxial growth of GaAs and other compound semiconductors with some attention given to the application of these materials to device technology. Our review is centered around structures grown on GaAs substrates but attention is also given to...
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| Veröffentlicht in: | Thin Solid Films 1991-12, Vol.205 (2), p.182-212 |
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| container_end_page | 212 |
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| container_issue | 2 |
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| container_title | Thin Solid Films |
| container_volume | 205 |
| creator | Adomi, K. Chyi, J.-I. Fang, S.F. Shen, T.C. Strite, S. Morkoç, H. |
| description | We describe recent progress in the field of molecular beam epitaxial growth of GaAs and other compound semiconductors with some attention given to the application of these materials to device technology. Our review is centered around structures grown on GaAs substrates but attention is also given to GaAs grown on silicon substrates and to InGaAsInAlAsImP heterostructures grown on InP substrates. The growth and properties of state-of-the-art GaAsAlAs, GaAsGe and InGaAsInAlAsInP heterostructures are detailed. In the sections devoted to the lattice-mismatched heteroepitaxial GaAs on silicon and InSb on GaAs systems more attention is paid to the crucial growth techniques necessary to obtain high quality material while device performance is also included. |
| doi_str_mv | 10.1016/0040-6090(91)90301-D |
| format | Article |
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| subjects | Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surface and interface dynamics and vibrations Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology |
| title | Molecular beam epitaxial growth of GaAs and other compound semiconductors |
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