Microstructure and superconductivity in epitaxial MgO/NbN multilayers
The aim of this investigation is to achieve high transition temperature, low resistivity films under conditions suitable for use in all-NbN Josephson junction fabrication. For this purpose, the heteroepitaxy of NbN on MgO films is investigated. For substrate temperature of 200°C or thereabouts, poly...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1989-08, Vol.28 (8), p.1367-1372 |
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| creator | NAGAOKA, S HAMASAKI, K YAMASHITA, T KOMATA, T |
| description | The aim of this investigation is to achieve high transition temperature, low resistivity films under conditions suitable for use in all-NbN Josephson junction fabrication. For this purpose, the heteroepitaxy of NbN on MgO films is investigated. For substrate temperature of 200°C or thereabouts, polycrystalline MgO films of (200) orientation were formed on (100) silicon, (11̄02) α-Al
2
O
3
, and fused silica. Based on XTEM, HEED and X-ray data, heteroepitaxial growth ((100)
NbN
//(100)
MgO
) was obtained in NbN films and NbN/MgO/NbN trilayers deposited on (200) oriented MgO films. The epitaxial NbN films of 10 nm thickness had high transition temperatures of about 14 K, and relatively low residual resistivities of less than 200 µΩ·cm. Using the GL relationships, we calculated the Ginzburg-Landau parameters, λ(0) and ξ, of our NbN films in the dirty limit. The calculated ξ(4.2 K) and λ(0) are ∼4.5 nm and ∼300 nm, respectively. |
| doi_str_mv | 10.1143/jjap.28.1367 |
| format | Article |
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2
O
3
, and fused silica. Based on XTEM, HEED and X-ray data, heteroepitaxial growth ((100)
NbN
//(100)
MgO
) was obtained in NbN films and NbN/MgO/NbN trilayers deposited on (200) oriented MgO films. The epitaxial NbN films of 10 nm thickness had high transition temperatures of about 14 K, and relatively low residual resistivities of less than 200 µΩ·cm. Using the GL relationships, we calculated the Ginzburg-Landau parameters, λ(0) and ξ, of our NbN films in the dirty limit. The calculated ξ(4.2 K) and λ(0) are ∼4.5 nm and ∼300 nm, respectively.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/jjap.28.1367</identifier><identifier>CODEN: JJAPA5</identifier><language>eng</language><publisher>Tokyo: Japanese journal of applied physics</publisher><subject>Applied sciences ; Compound structure devices ; Electronics ; Exact sciences and technology ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>Japanese Journal of Applied Physics, 1989-08, Vol.28 (8), p.1367-1372</ispartof><rights>1991 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c389t-6ee955af13289f0a07f1704d7754d92ce80e3c4e7bc43a4719aa43825c57948e3</citedby><cites>FETCH-LOGICAL-c389t-6ee955af13289f0a07f1704d7754d92ce80e3c4e7bc43a4719aa43825c57948e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=19777821$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>NAGAOKA, S</creatorcontrib><creatorcontrib>HAMASAKI, K</creatorcontrib><creatorcontrib>YAMASHITA, T</creatorcontrib><creatorcontrib>KOMATA, T</creatorcontrib><title>Microstructure and superconductivity in epitaxial MgO/NbN multilayers</title><title>Japanese Journal of Applied Physics</title><description>The aim of this investigation is to achieve high transition temperature, low resistivity films under conditions suitable for use in all-NbN Josephson junction fabrication. For this purpose, the heteroepitaxy of NbN on MgO films is investigated. For substrate temperature of 200°C or thereabouts, polycrystalline MgO films of (200) orientation were formed on (100) silicon, (11̄02) α-Al
2
O
3
, and fused silica. Based on XTEM, HEED and X-ray data, heteroepitaxial growth ((100)
NbN
//(100)
MgO
) was obtained in NbN films and NbN/MgO/NbN trilayers deposited on (200) oriented MgO films. The epitaxial NbN films of 10 nm thickness had high transition temperatures of about 14 K, and relatively low residual resistivities of less than 200 µΩ·cm. Using the GL relationships, we calculated the Ginzburg-Landau parameters, λ(0) and ξ, of our NbN films in the dirty limit. The calculated ξ(4.2 K) and λ(0) are ∼4.5 nm and ∼300 nm, respectively.</description><subject>Applied sciences</subject><subject>Compound structure devices</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1989</creationdate><recordtype>article</recordtype><recordid>eNpFkMtOwzAURC0EEqWw4wOygRVp_YztZVWVR9UHC1hbt46DXKVJsBNE_p5UrcTqaq7OjDSD0D3BE0I4m-730EyomhCWyQs0IozLlONMXKIRxpSkXFN6jW5i3A8yE5yM0GLtbahjGzrbdsElUOVJ7BoXbF3lw8__-LZPfJW4xrfw66FM1l_b6Wa3SQ5d2foSehfiLboqoIzu7nzH6PN58TF_TVfbl7f5bJVapnSbZs5pIaAgjCpdYMCyIBLzXErBc02tU9gxy53cWc6AS6IBOFNUWCE1V46N0eMptwn1d-diaw4-WleWULm6i4YKOtCCDuDTCTyWi8EVpgn-AKE3BJvjVma5nL0bqsxxqwF_OOdCtFAWASrr479HSykVJewPT7Jpvg</recordid><startdate>19890801</startdate><enddate>19890801</enddate><creator>NAGAOKA, S</creator><creator>HAMASAKI, K</creator><creator>YAMASHITA, T</creator><creator>KOMATA, T</creator><general>Japanese journal of applied physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>19890801</creationdate><title>Microstructure and superconductivity in epitaxial MgO/NbN multilayers</title><author>NAGAOKA, S ; HAMASAKI, K ; YAMASHITA, T ; KOMATA, T</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c389t-6ee955af13289f0a07f1704d7754d92ce80e3c4e7bc43a4719aa43825c57948e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1989</creationdate><topic>Applied sciences</topic><topic>Compound structure devices</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>NAGAOKA, S</creatorcontrib><creatorcontrib>HAMASAKI, K</creatorcontrib><creatorcontrib>YAMASHITA, T</creatorcontrib><creatorcontrib>KOMATA, T</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>NAGAOKA, S</au><au>HAMASAKI, K</au><au>YAMASHITA, T</au><au>KOMATA, T</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Microstructure and superconductivity in epitaxial MgO/NbN multilayers</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1989-08-01</date><risdate>1989</risdate><volume>28</volume><issue>8</issue><spage>1367</spage><epage>1372</epage><pages>1367-1372</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPA5</coden><abstract>The aim of this investigation is to achieve high transition temperature, low resistivity films under conditions suitable for use in all-NbN Josephson junction fabrication. For this purpose, the heteroepitaxy of NbN on MgO films is investigated. For substrate temperature of 200°C or thereabouts, polycrystalline MgO films of (200) orientation were formed on (100) silicon, (11̄02) α-Al
2
O
3
, and fused silica. Based on XTEM, HEED and X-ray data, heteroepitaxial growth ((100)
NbN
//(100)
MgO
) was obtained in NbN films and NbN/MgO/NbN trilayers deposited on (200) oriented MgO films. The epitaxial NbN films of 10 nm thickness had high transition temperatures of about 14 K, and relatively low residual resistivities of less than 200 µΩ·cm. Using the GL relationships, we calculated the Ginzburg-Landau parameters, λ(0) and ξ, of our NbN films in the dirty limit. The calculated ξ(4.2 K) and λ(0) are ∼4.5 nm and ∼300 nm, respectively.</abstract><cop>Tokyo</cop><pub>Japanese journal of applied physics</pub><doi>10.1143/jjap.28.1367</doi><tpages>6</tpages></addata></record> |
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| language | eng |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Applied sciences Compound structure devices Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | Microstructure and superconductivity in epitaxial MgO/NbN multilayers |
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