Localized levels parameters in CdInGaS sub(4) single crystals as determined by photoconductivity measurements

Localized levels parameters in CdInGaS sub(4) single crystals as determined by photoconductivity measurements

Photoconductivity measurements with the alternative light method were carried out on CdInGaS sub(4) single crystals in order to determine the parameters of the localized levels present in its energy gap. Nine discrete electron traps were resolved and their levels, concentrations and electron capture...

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Veröffentlicht in:Materials research bulletin 1991-01, Vol.26 (7), p.675-691
Hauptverfasser: Karoutis, A D, Anagnostopoulos, A N
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creator Karoutis, A D
Anagnostopoulos, A N
description Photoconductivity measurements with the alternative light method were carried out on CdInGaS sub(4) single crystals in order to determine the parameters of the localized levels present in its energy gap. Nine discrete electron traps were resolved and their levels, concentrations and electron capture coefficients were estimated. Their nature is discussed and their concentrations as obtained by photoconductivity measurements are compared with concentrations deduced from TEM studies.
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title Localized levels parameters in CdInGaS sub(4) single crystals as determined by photoconductivity measurements
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