Thickness-modulated lateral MoS2 diodes with sub-terahertz cutoff frequency

Thickness-modulated lateral MoS2 diodes with an extracted benchmark cutoff frequency (fc) of up to 126 GHz are implemented and fully characterised. Fabricated diodes demonstrate an on–off current ratio of more than 600 and a short circuit current responsivity at zero-bias of 7 A/W. The excellent per...

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Veröffentlicht in:	Nanoscale 2021-05, Vol.13 (19), p.8940-8947
Hauptverfasser:	Askar, Abdelrahman M, Saeed, Mohamed, Hamed, Ahmed, Negra, Renato, Adachi, Michael M
Format:	Artikel
Sprache:	eng
Schlagworte:	Circuits Contact resistance Crystal structure Diodes Model matching Molybdenum disulfide Multilayers Short circuit currents Switching circuits Thickness
Online-Zugang:	Volltext
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