Graded-junction gate/n super(-) overlapped LDD MOSFET structures for high hot-carrier reliability

Graded-junction gate/n super(-) overlapped LDD MOSFET structures for high hot-carrier reliability

A newly developed gate/n super(-) overlapped LDD MOSFET has been investigated. The MOSFET was fabricated by an oblique rotating ion implantation technique. A new formula of impurity ion profile was derived to analyze the lowering of substrate current and improvement of the degradation caused by hot-...

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Veröffentlicht in:IEEE transactions on electron devices 1991-01, Vol.38 (12), p.2647-2656
Hauptverfasser: Okumura, Y, Kunikiyo, T, Ogoh, I, Genjo, H, Inuishi, M, Nagatomo, M, Matsukawa, T
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container_issue 12
container_start_page 2647
container_title IEEE transactions on electron devices
container_volume 38
creator Okumura, Y
Kunikiyo, T
Ogoh, I
Genjo, H
Inuishi, M
Nagatomo, M
Matsukawa, T
description A newly developed gate/n super(-) overlapped LDD MOSFET has been investigated. The MOSFET was fabricated by an oblique rotating ion implantation technique. A new formula of impurity ion profile was derived to analyze the lowering of substrate current and improvement of the degradation caused by hot-carrier effect. It was proved that impurity ion profile near the drain edge is remarkably graded in the direction both along channel and toward substrate even just after the implantation, so that maximum lateral electric field is remarkably relaxed as compared with conventional LDD MOSFET.
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title Graded-junction gate/n super(-) overlapped LDD MOSFET structures for high hot-carrier reliability
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