Growth of tungsten film by focused ion beam induced deposition

Growth of tungsten film by focused-ion-beam (FIB) induced deposition is studied using scanning electron microscope. A 30 kV Ga + beam with a current density of 14 mA/cm 2 is used to deposit a tungsten film on a SiO 2 substrate in a tungsten hexacarbonyl (W(CO) 6 ) gas environment. The resistivity of...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1991-03, Vol.30 (3), p.L518-L520
Hauptverfasser:	TAKAHASHI, Y, MADOKORO, Y, ISHITANI, T
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Metals. Metallurgy Physics Solid surfaces and solid-solid interfaces Surface and interface dynamics and vibrations Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
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