Gallium arsenide HEMTs for low-noise GHz communications engineering

The demands of communication systems for low noise receiver front-ends has led to the development of new transistor structures based on GaAs material and fabricated by molecular beam epitaxy. This paper describes one such device, the high electron mobility transistor (HEMT).

Bibliographische Detailangaben

Veröffentlicht in:	Microelectronics 1989-09, Vol.20 (5), p.1-6
1. Verfasser:	Daembkes, H
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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