Gallium arsenide HEMTs for low-noise GHz communications engineering
The demands of communication systems for low noise receiver front-ends has led to the development of new transistor structures based on GaAs material and fabricated by molecular beam epitaxy. This paper describes one such device, the high electron mobility transistor (HEMT).
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| Veröffentlicht in: | Microelectronics 1989-09, Vol.20 (5), p.1-6 |
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| container_title | Microelectronics |
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| creator | Daembkes, H |
| description | The demands of communication systems for low noise receiver front-ends has led to the development of new transistor structures based on GaAs material and fabricated by molecular beam epitaxy. This paper describes one such device, the high electron mobility transistor (HEMT). |
| doi_str_mv | 10.1016/0026-2692(89)90037-2 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 1879-2391 |
| ispartof | Microelectronics, 1989-09, Vol.20 (5), p.1-6 |
| issn | 1879-2391 0026-2692 1879-2391 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_25231724 |
| source | ScienceDirect Journals (5 years ago - present) |
| title | Gallium arsenide HEMTs for low-noise GHz communications engineering |
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