Laser-Driven Growth of Semiconductor Nanowires from Colloidal Nanocrystals

Semiconductor nanowire production through vapor- and solution-based processes has propelled nanowire systems toward a wide range of technological applications. Although vapor-based nanowire syntheses enable precise control over nanowire composition and phase, they typically employ batch processes with specialized pressure management systems, limiting throughput. Solution-based nanowire growth processes have improved scalability but can require even more extensive pressure and temperature management systems. Here, we demonstrate a solution-based nanowire growth process that utilizes the large Young–Laplace interfacial surface pressures and collective heating effects of colloidal metal nanocrystals under irradiation to drive nanowire growth photothermally. Laser irradiation of a solution containing metal nanocrystals and semiconductor precursors facilitates rapid heating, precursor decomposition, and nanowire growth on a benchtop in simple glassware under standard conditions, potentially enabling a range of solution-based experiments including in-line combinatorial identification of optimized reaction parameters, in situ measurements, and the production of nanowires with complex compositions.