Film deposition temperature dependence of electron mobility for accumulation-mode InP metal-insulator-semiconductor field-effect transistors

The effects of substrate temperature during film deposition on semi-insulating InP metal-insulator-semiconductor field-effect transistor characteristics are reported. The substrate temperature during film deposition, Ts, has a large influence on elastic and inelastic electron scattering times. With...

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Veröffentlicht in:	Journal of applied physics 1989-02, Vol.65 (3), p.1328-1337
Hauptverfasser:	HIROTA, Y, OKAMURA, M, YAMAGUCHI, E, HISAKI, T
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
Online-Zugang:	Volltext
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