Full-wafer technology-A new approach to large-scale laser fabrication and integration
A concept for full-wafer processing (FWP) and full-wafer testing (FWT) for semiconductor laser fabrication in the AlGaAs-GaAs material system is presented. The approach is based on chemically assisted ion beam etching for the laser-mirror formation. Record values for mirror scattering, optimum mirro...
Gespeichert in:
| Veröffentlicht in: | IEEE journal of quantum electronics 1991-06, Vol.27 (6), p.1319-1331 |
|---|---|
| Hauptverfasser: | , , , , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 1331 |
|---|---|
| container_issue | 6 |
| container_start_page | 1319 |
| container_title | IEEE journal of quantum electronics |
| container_volume | 27 |
| creator | Vettiger, P. Benedict, M.K. Bona, G.-L. Buchmann, P. Cahoon, E.C. Datwyler, K. Dietrich, H.-P. Moser, A. Seitz, H.K. Voegeli, O. Webb, D.J. Wolf, P. |
| description | A concept for full-wafer processing (FWP) and full-wafer testing (FWT) for semiconductor laser fabrication in the AlGaAs-GaAs material system is presented. The approach is based on chemically assisted ion beam etching for the laser-mirror formation. Record values for mirror scattering, optimum mirror reflectivity, and equivalence to cleaved mirrors in terms of laser threshold and efficiency have been achieved. Promising results for uniformity and reproducibility for major laser diode characteristics on processed 2-in wafers have been found. The FWP technology has been extensively used for designing test sites to determine various materials, process, and laser parameters, such as sheet resistance, ridge dimensions, lithographic alignment errors, mirror surface leakage, etc.< > |
| doi_str_mv | 10.1109/3.89949 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_miscellaneous_25207993</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>89949</ieee_id><sourcerecordid>25207993</sourcerecordid><originalsourceid>FETCH-LOGICAL-c398t-ba23359cee05a44bfe5e1e092186693081f63c15cea336a60ca07b48ed70f5d03</originalsourceid><addsrcrecordid>eNqN0M9LwzAUB_AgCs4pnr31IHrKTJqkTY5j-AsGXvRcXrOXrZK1M-kY--_N1uHZU_LIh28eX0JuOZtwzsyTmGhjpDkjI66Uprzk4pyMGOOaGm7KS3IV43capdRsRL5ett7THTgMWY921Xa-W-7pNGtxl8FmEzqwq6zvMg9hiTRa8JjuMXEHdWgs9E3XZtAusqbtcRmO8zW5cOAj3pzOcfrn-XP2Rucfr--z6ZxaYXRPa8iFUMYiMgVS1g4VcmQm57oojGCau0JYriyCEAUUzAIra6lxUTKnFkyMycOQm_b82WLsq3UTLXoPLXbbWOVasLzM_wFVzkpjRIKPA7ShizGgqzahWUPYV5xVh34rUR37TfL-FAmHVlyA1jbxj0ujVKl4YncDaxDx73WI-AW33oGS</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>25207993</pqid></control><display><type>article</type><title>Full-wafer technology-A new approach to large-scale laser fabrication and integration</title><source>IEEE Electronic Library (IEL)</source><creator>Vettiger, P. ; Benedict, M.K. ; Bona, G.-L. ; Buchmann, P. ; Cahoon, E.C. ; Datwyler, K. ; Dietrich, H.-P. ; Moser, A. ; Seitz, H.K. ; Voegeli, O. ; Webb, D.J. ; Wolf, P.</creator><creatorcontrib>Vettiger, P. ; Benedict, M.K. ; Bona, G.-L. ; Buchmann, P. ; Cahoon, E.C. ; Datwyler, K. ; Dietrich, H.-P. ; Moser, A. ; Seitz, H.K. ; Voegeli, O. ; Webb, D.J. ; Wolf, P.</creatorcontrib><description>A concept for full-wafer processing (FWP) and full-wafer testing (FWT) for semiconductor laser fabrication in the AlGaAs-GaAs material system is presented. The approach is based on chemically assisted ion beam etching for the laser-mirror formation. Record values for mirror scattering, optimum mirror reflectivity, and equivalence to cleaved mirrors in terms of laser threshold and efficiency have been achieved. Promising results for uniformity and reproducibility for major laser diode characteristics on processed 2-in wafers have been found. The FWP technology has been extensively used for designing test sites to determine various materials, process, and laser parameters, such as sheet resistance, ridge dimensions, lithographic alignment errors, mirror surface leakage, etc.< ></description><identifier>ISSN: 0018-9197</identifier><identifier>EISSN: 1558-1713</identifier><identifier>DOI: 10.1109/3.89949</identifier><identifier>CODEN: IEJQA7</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Chemical lasers ; Chemical technology ; Exact sciences and technology ; Fundamental areas of phenomenology (including applications) ; Large-scale systems ; Lasers ; Materials testing ; Mirrors ; Optical materials ; Optics ; Physics ; Semiconductor device testing ; Semiconductor lasers ; Semiconductor lasers; laser diodes ; Surface resistance ; System testing</subject><ispartof>IEEE journal of quantum electronics, 1991-06, Vol.27 (6), p.1319-1331</ispartof><rights>1992 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c398t-ba23359cee05a44bfe5e1e092186693081f63c15cea336a60ca07b48ed70f5d03</citedby><cites>FETCH-LOGICAL-c398t-ba23359cee05a44bfe5e1e092186693081f63c15cea336a60ca07b48ed70f5d03</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/89949$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/89949$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=4955751$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Vettiger, P.</creatorcontrib><creatorcontrib>Benedict, M.K.</creatorcontrib><creatorcontrib>Bona, G.-L.</creatorcontrib><creatorcontrib>Buchmann, P.</creatorcontrib><creatorcontrib>Cahoon, E.C.</creatorcontrib><creatorcontrib>Datwyler, K.</creatorcontrib><creatorcontrib>Dietrich, H.-P.</creatorcontrib><creatorcontrib>Moser, A.</creatorcontrib><creatorcontrib>Seitz, H.K.</creatorcontrib><creatorcontrib>Voegeli, O.</creatorcontrib><creatorcontrib>Webb, D.J.</creatorcontrib><creatorcontrib>Wolf, P.</creatorcontrib><title>Full-wafer technology-A new approach to large-scale laser fabrication and integration</title><title>IEEE journal of quantum electronics</title><addtitle>JQE</addtitle><description>A concept for full-wafer processing (FWP) and full-wafer testing (FWT) for semiconductor laser fabrication in the AlGaAs-GaAs material system is presented. The approach is based on chemically assisted ion beam etching for the laser-mirror formation. Record values for mirror scattering, optimum mirror reflectivity, and equivalence to cleaved mirrors in terms of laser threshold and efficiency have been achieved. Promising results for uniformity and reproducibility for major laser diode characteristics on processed 2-in wafers have been found. The FWP technology has been extensively used for designing test sites to determine various materials, process, and laser parameters, such as sheet resistance, ridge dimensions, lithographic alignment errors, mirror surface leakage, etc.< ></description><subject>Chemical lasers</subject><subject>Chemical technology</subject><subject>Exact sciences and technology</subject><subject>Fundamental areas of phenomenology (including applications)</subject><subject>Large-scale systems</subject><subject>Lasers</subject><subject>Materials testing</subject><subject>Mirrors</subject><subject>Optical materials</subject><subject>Optics</subject><subject>Physics</subject><subject>Semiconductor device testing</subject><subject>Semiconductor lasers</subject><subject>Semiconductor lasers; laser diodes</subject><subject>Surface resistance</subject><subject>System testing</subject><issn>0018-9197</issn><issn>1558-1713</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1991</creationdate><recordtype>article</recordtype><recordid>eNqN0M9LwzAUB_AgCs4pnr31IHrKTJqkTY5j-AsGXvRcXrOXrZK1M-kY--_N1uHZU_LIh28eX0JuOZtwzsyTmGhjpDkjI66Uprzk4pyMGOOaGm7KS3IV43capdRsRL5ett7THTgMWY921Xa-W-7pNGtxl8FmEzqwq6zvMg9hiTRa8JjuMXEHdWgs9E3XZtAusqbtcRmO8zW5cOAj3pzOcfrn-XP2Rucfr--z6ZxaYXRPa8iFUMYiMgVS1g4VcmQm57oojGCau0JYriyCEAUUzAIra6lxUTKnFkyMycOQm_b82WLsq3UTLXoPLXbbWOVasLzM_wFVzkpjRIKPA7ShizGgqzahWUPYV5xVh34rUR37TfL-FAmHVlyA1jbxj0ujVKl4YncDaxDx73WI-AW33oGS</recordid><startdate>19910601</startdate><enddate>19910601</enddate><creator>Vettiger, P.</creator><creator>Benedict, M.K.</creator><creator>Bona, G.-L.</creator><creator>Buchmann, P.</creator><creator>Cahoon, E.C.</creator><creator>Datwyler, K.</creator><creator>Dietrich, H.-P.</creator><creator>Moser, A.</creator><creator>Seitz, H.K.</creator><creator>Voegeli, O.</creator><creator>Webb, D.J.</creator><creator>Wolf, P.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7SP</scope><scope>7U5</scope></search><sort><creationdate>19910601</creationdate><title>Full-wafer technology-A new approach to large-scale laser fabrication and integration</title><author>Vettiger, P. ; Benedict, M.K. ; Bona, G.-L. ; Buchmann, P. ; Cahoon, E.C. ; Datwyler, K. ; Dietrich, H.-P. ; Moser, A. ; Seitz, H.K. ; Voegeli, O. ; Webb, D.J. ; Wolf, P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c398t-ba23359cee05a44bfe5e1e092186693081f63c15cea336a60ca07b48ed70f5d03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1991</creationdate><topic>Chemical lasers</topic><topic>Chemical technology</topic><topic>Exact sciences and technology</topic><topic>Fundamental areas of phenomenology (including applications)</topic><topic>Large-scale systems</topic><topic>Lasers</topic><topic>Materials testing</topic><topic>Mirrors</topic><topic>Optical materials</topic><topic>Optics</topic><topic>Physics</topic><topic>Semiconductor device testing</topic><topic>Semiconductor lasers</topic><topic>Semiconductor lasers; laser diodes</topic><topic>Surface resistance</topic><topic>System testing</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Vettiger, P.</creatorcontrib><creatorcontrib>Benedict, M.K.</creatorcontrib><creatorcontrib>Bona, G.-L.</creatorcontrib><creatorcontrib>Buchmann, P.</creatorcontrib><creatorcontrib>Cahoon, E.C.</creatorcontrib><creatorcontrib>Datwyler, K.</creatorcontrib><creatorcontrib>Dietrich, H.-P.</creatorcontrib><creatorcontrib>Moser, A.</creatorcontrib><creatorcontrib>Seitz, H.K.</creatorcontrib><creatorcontrib>Voegeli, O.</creatorcontrib><creatorcontrib>Webb, D.J.</creatorcontrib><creatorcontrib>Wolf, P.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><jtitle>IEEE journal of quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Vettiger, P.</au><au>Benedict, M.K.</au><au>Bona, G.-L.</au><au>Buchmann, P.</au><au>Cahoon, E.C.</au><au>Datwyler, K.</au><au>Dietrich, H.-P.</au><au>Moser, A.</au><au>Seitz, H.K.</au><au>Voegeli, O.</au><au>Webb, D.J.</au><au>Wolf, P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Full-wafer technology-A new approach to large-scale laser fabrication and integration</atitle><jtitle>IEEE journal of quantum electronics</jtitle><stitle>JQE</stitle><date>1991-06-01</date><risdate>1991</risdate><volume>27</volume><issue>6</issue><spage>1319</spage><epage>1331</epage><pages>1319-1331</pages><issn>0018-9197</issn><eissn>1558-1713</eissn><coden>IEJQA7</coden><abstract>A concept for full-wafer processing (FWP) and full-wafer testing (FWT) for semiconductor laser fabrication in the AlGaAs-GaAs material system is presented. The approach is based on chemically assisted ion beam etching for the laser-mirror formation. Record values for mirror scattering, optimum mirror reflectivity, and equivalence to cleaved mirrors in terms of laser threshold and efficiency have been achieved. Promising results for uniformity and reproducibility for major laser diode characteristics on processed 2-in wafers have been found. The FWP technology has been extensively used for designing test sites to determine various materials, process, and laser parameters, such as sheet resistance, ridge dimensions, lithographic alignment errors, mirror surface leakage, etc.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/3.89949</doi><tpages>13</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0018-9197 |
| ispartof | IEEE journal of quantum electronics, 1991-06, Vol.27 (6), p.1319-1331 |
| issn | 0018-9197 1558-1713 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_25207993 |
| source | IEEE Electronic Library (IEL) |
| subjects | Chemical lasers Chemical technology Exact sciences and technology Fundamental areas of phenomenology (including applications) Large-scale systems Lasers Materials testing Mirrors Optical materials Optics Physics Semiconductor device testing Semiconductor lasers Semiconductor lasers laser diodes Surface resistance System testing |
| title | Full-wafer technology-A new approach to large-scale laser fabrication and integration |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T04%3A51%3A27IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Full-wafer%20technology-A%20new%20approach%20to%20large-scale%20laser%20fabrication%20and%20integration&rft.jtitle=IEEE%20journal%20of%20quantum%20electronics&rft.au=Vettiger,%20P.&rft.date=1991-06-01&rft.volume=27&rft.issue=6&rft.spage=1319&rft.epage=1331&rft.pages=1319-1331&rft.issn=0018-9197&rft.eissn=1558-1713&rft.coden=IEJQA7&rft_id=info:doi/10.1109/3.89949&rft_dat=%3Cproquest_RIE%3E25207993%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=25207993&rft_id=info:pmid/&rft_ieee_id=89949&rfr_iscdi=true |