Dependence of apparent barrier height on barrier thickness for perpendicular transport in AlAs/GaAs single-barrier structures grown by molecular beam epitaxy
Current-voltage characteristics of single-barrier AlAs/GaAs heterostructures measured over a wide temperature range are used to elucidate the mechanisms governing electron transport through these barriers. Five barriers, ranging in thickness from 14.2 to 150 Å, are examined. The results clearly illu...
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| Veröffentlicht in: | Applied physics letters 1989-02, Vol.54 (6), p.549-551 |
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| container_title | Applied physics letters |
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| creator | KYONO, C. S KESAN, V. P NEIKIRK, D. P MAZIAR, C. M STREETMAN, B. G |
| description | Current-voltage characteristics of single-barrier AlAs/GaAs heterostructures measured over a wide temperature range are used to elucidate the mechanisms governing electron transport through these barriers. Five barriers, ranging in thickness from 14.2 to 150 Å, are examined. The results clearly illustrate Γ-band, elastic-tunneling-dominated transport for the thinnest barrier (14.2 Å) devices and thermionic emission characteristics for the thickest barrier (150 Å) devices. However, devices with an intermediate barrier thickness exhibited tunneling-like currents larger than calculated low-temperature elastic tunneling currents. This effect is apparently due to inelastic tunneling from the GaAs Γ band through the AlAs X-point barrier. |
| doi_str_mv | 10.1063/1.100927 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_25175154</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>25175154</sourcerecordid><originalsourceid>FETCH-LOGICAL-c385t-d902cc5dbf948148476d1dfb202bea59dcca610a35ca87d7af729db4134daafc3</originalsourceid><addsrcrecordid>eNo9kMFO3DAQhq2qSN0CEo_gQ1X1ErDjeJ0cV7SlSEhc4BxN7PGu26ydehyVfRjetUELnH7NzDff4WfsQopLKdbqSi4hutp8YCspjKmUlO1HthJCqGrdafmJfSb6vYy6VmrFnr_jhNFhtMiT5zBNkDEWPkDOATPfYdjuCk_xfVN2wf6JSMR9ynzC_PIf7DzCcssQaUq58BD5ZtzQ1Q1siFOI2xGrNwOVPNsyZyS-zenfoj7wfRrx6BgQ9hynUODpcMZOPIyE5695yh5__ni4_lXd3d_cXm_uKqtaXSrXidpa7QbfNa1s2sasnXR-qEW92HTnrIW1FKC0hdY4A97UnRsaqRoH4K06ZV-P3imnvzNS6feBLI4jREwz9bWWRkvdLOC3I2hzIsro-ymHPeRDL0X_0n8v-2P_C_rl1QlkYfRLNTbQO2-UUk0t1H_8L4jG</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>25175154</pqid></control><display><type>article</type><title>Dependence of apparent barrier height on barrier thickness for perpendicular transport in AlAs/GaAs single-barrier structures grown by molecular beam epitaxy</title><source>AIP Digital Archive</source><creator>KYONO, C. S ; KESAN, V. P ; NEIKIRK, D. P ; MAZIAR, C. M ; STREETMAN, B. G</creator><creatorcontrib>KYONO, C. S ; KESAN, V. P ; NEIKIRK, D. P ; MAZIAR, C. M ; STREETMAN, B. G</creatorcontrib><description>Current-voltage characteristics of single-barrier AlAs/GaAs heterostructures measured over a wide temperature range are used to elucidate the mechanisms governing electron transport through these barriers. Five barriers, ranging in thickness from 14.2 to 150 Å, are examined. The results clearly illustrate Γ-band, elastic-tunneling-dominated transport for the thinnest barrier (14.2 Å) devices and thermionic emission characteristics for the thickest barrier (150 Å) devices. However, devices with an intermediate barrier thickness exhibited tunneling-like currents larger than calculated low-temperature elastic tunneling currents. This effect is apparently due to inelastic tunneling from the GaAs Γ band through the AlAs X-point barrier.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.100927</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronic transport in interface structures ; Exact sciences and technology ; Physics</subject><ispartof>Applied physics letters, 1989-02, Vol.54 (6), p.549-551</ispartof><rights>1989 INIST-CNRS</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c385t-d902cc5dbf948148476d1dfb202bea59dcca610a35ca87d7af729db4134daafc3</citedby><cites>FETCH-LOGICAL-c385t-d902cc5dbf948148476d1dfb202bea59dcca610a35ca87d7af729db4134daafc3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=7333420$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>KYONO, C. S</creatorcontrib><creatorcontrib>KESAN, V. P</creatorcontrib><creatorcontrib>NEIKIRK, D. P</creatorcontrib><creatorcontrib>MAZIAR, C. M</creatorcontrib><creatorcontrib>STREETMAN, B. G</creatorcontrib><title>Dependence of apparent barrier height on barrier thickness for perpendicular transport in AlAs/GaAs single-barrier structures grown by molecular beam epitaxy</title><title>Applied physics letters</title><description>Current-voltage characteristics of single-barrier AlAs/GaAs heterostructures measured over a wide temperature range are used to elucidate the mechanisms governing electron transport through these barriers. Five barriers, ranging in thickness from 14.2 to 150 Å, are examined. The results clearly illustrate Γ-band, elastic-tunneling-dominated transport for the thinnest barrier (14.2 Å) devices and thermionic emission characteristics for the thickest barrier (150 Å) devices. However, devices with an intermediate barrier thickness exhibited tunneling-like currents larger than calculated low-temperature elastic tunneling currents. This effect is apparently due to inelastic tunneling from the GaAs Γ band through the AlAs X-point barrier.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronic transport in interface structures</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1989</creationdate><recordtype>article</recordtype><recordid>eNo9kMFO3DAQhq2qSN0CEo_gQ1X1ErDjeJ0cV7SlSEhc4BxN7PGu26ydehyVfRjetUELnH7NzDff4WfsQopLKdbqSi4hutp8YCspjKmUlO1HthJCqGrdafmJfSb6vYy6VmrFnr_jhNFhtMiT5zBNkDEWPkDOATPfYdjuCk_xfVN2wf6JSMR9ynzC_PIf7DzCcssQaUq58BD5ZtzQ1Q1siFOI2xGrNwOVPNsyZyS-zenfoj7wfRrx6BgQ9hynUODpcMZOPIyE5695yh5__ni4_lXd3d_cXm_uKqtaXSrXidpa7QbfNa1s2sasnXR-qEW92HTnrIW1FKC0hdY4A97UnRsaqRoH4K06ZV-P3imnvzNS6feBLI4jREwz9bWWRkvdLOC3I2hzIsro-ymHPeRDL0X_0n8v-2P_C_rl1QlkYfRLNTbQO2-UUk0t1H_8L4jG</recordid><startdate>19890206</startdate><enddate>19890206</enddate><creator>KYONO, C. S</creator><creator>KESAN, V. P</creator><creator>NEIKIRK, D. P</creator><creator>MAZIAR, C. M</creator><creator>STREETMAN, B. G</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>19890206</creationdate><title>Dependence of apparent barrier height on barrier thickness for perpendicular transport in AlAs/GaAs single-barrier structures grown by molecular beam epitaxy</title><author>KYONO, C. S ; KESAN, V. P ; NEIKIRK, D. P ; MAZIAR, C. M ; STREETMAN, B. G</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c385t-d902cc5dbf948148476d1dfb202bea59dcca610a35ca87d7af729db4134daafc3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1989</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Electronic transport in interface structures</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>KYONO, C. S</creatorcontrib><creatorcontrib>KESAN, V. P</creatorcontrib><creatorcontrib>NEIKIRK, D. P</creatorcontrib><creatorcontrib>MAZIAR, C. M</creatorcontrib><creatorcontrib>STREETMAN, B. G</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>KYONO, C. S</au><au>KESAN, V. P</au><au>NEIKIRK, D. P</au><au>MAZIAR, C. M</au><au>STREETMAN, B. G</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Dependence of apparent barrier height on barrier thickness for perpendicular transport in AlAs/GaAs single-barrier structures grown by molecular beam epitaxy</atitle><jtitle>Applied physics letters</jtitle><date>1989-02-06</date><risdate>1989</risdate><volume>54</volume><issue>6</issue><spage>549</spage><epage>551</epage><pages>549-551</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Current-voltage characteristics of single-barrier AlAs/GaAs heterostructures measured over a wide temperature range are used to elucidate the mechanisms governing electron transport through these barriers. Five barriers, ranging in thickness from 14.2 to 150 Å, are examined. The results clearly illustrate Γ-band, elastic-tunneling-dominated transport for the thinnest barrier (14.2 Å) devices and thermionic emission characteristics for the thickest barrier (150 Å) devices. However, devices with an intermediate barrier thickness exhibited tunneling-like currents larger than calculated low-temperature elastic tunneling currents. This effect is apparently due to inelastic tunneling from the GaAs Γ band through the AlAs X-point barrier.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.100927</doi><tpages>3</tpages><oa>free_for_read</oa></addata></record> |
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| ispartof | Applied physics letters, 1989-02, Vol.54 (6), p.549-551 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_25175154 |
| source | AIP Digital Archive |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Exact sciences and technology Physics |
| title | Dependence of apparent barrier height on barrier thickness for perpendicular transport in AlAs/GaAs single-barrier structures grown by molecular beam epitaxy |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T14%3A17%3A39IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Dependence%20of%20apparent%20barrier%20height%20on%20barrier%20thickness%20for%20perpendicular%20transport%20in%20AlAs/GaAs%20single-barrier%20structures%20grown%20by%20molecular%20beam%20epitaxy&rft.jtitle=Applied%20physics%20letters&rft.au=KYONO,%20C.%20S&rft.date=1989-02-06&rft.volume=54&rft.issue=6&rft.spage=549&rft.epage=551&rft.pages=549-551&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.100927&rft_dat=%3Cproquest_cross%3E25175154%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=25175154&rft_id=info:pmid/&rfr_iscdi=true |