Reducing metal/graphene contact resistance via N, N-dimethylacetamide-assisted clean fabrication process

Contact resistance ( ) is of great importance for radio frequency (RF) applications of graphene, especially graphene field effect transistors (FETs) with short channel. FETs and transmission line model test structures based on chemical vapor deposition grown graphene are fabricated. The effects of e...

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Veröffentlicht in:Nanotechnology 2021-05, Vol.32 (31), p.315201
Hauptverfasser: Zhu, Chao-yi, Peng, Song-ang, Zhang, Xiao-rui, Yao, Yao, Huang, Xin-nan, Yan, Yun-peng, Zhang, Da-yong, Shi, Jing-yuan, Jin, Zhi
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Sprache:eng
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