Coating of Phosphide Catalysts on p‑Silicon by a Necking Strategy for Improved Photoelectrochemical Characteristics in Alkaline Media
The methodology of coating electrocatalysts on semiconductor substrates is critical for the catalytic performance of photoelectrochemical electrodes. A weakly bound coating leads to orders of magnitude lower efficiency and reliability compared to those required to meet the commercial demand. Herein,...
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Veröffentlicht in: | ACS applied materials & interfaces 2021-05, Vol.13 (17), p.20185-20193 |
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Hauptverfasser: | , , , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The methodology of coating electrocatalysts on semiconductor substrates is critical for the catalytic performance of photoelectrochemical electrodes. A weakly bound coating leads to orders of magnitude lower efficiency and reliability compared to those required to meet the commercial demand. Herein, a facile strategy based on the hydrolysis of TiCl4 is developed to solve the coating issue. Mesoporous tungsten phosphide (WP) particles were spin-coated and affixed onto TiO2-protected planar p-Si by the formation of a TiO2 necking layer between the catalyst particles and the substrates. Under 1 sun illumination, the as-prepared WP/TiO2/Si photocathode yields a saturated current density of −35 mA cm–2 and a durability of over 110 h with a current density over −15 mA cm–2 at 0 V versus a reversible hydrogen electrode in a 1.0 M KOH solution, which is among the state-of-the-art performances of commercial planar Si-based photocathodes. The Kelvin probe force microscopy results suggest the successive transfer of photoelectrons from Si to TiO2 and WP. The as-formed TiO2 necking layer plays the key role in ensuring the surface catalytic activity and durability. This necking strategy is also applicable for coating other transition-metal phosphides, for example, MoP and FeP, thus offering a practical approach to meet the commercial requirement of low-cost, highly efficient, and durable photoelectrodes. |
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ISSN: | 1944-8244 1944-8252 1944-8252 |
DOI: | 10.1021/acsami.1c03620 |