Cryogenic performance of a GaAs MMIC distributed amplifier
A three-stage GaAs MMIC distributed amplifier chip which was specially packaged in a two-chip, six-stage amplifier for cryogenic operation from 1 to 10 GHz is discussed. When immersed in liquid nitrogen, a fourfold reduction in amplifier noise is observed over the 4-GHz to 8-GHz frequency range. The...
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Veröffentlicht in: | IEEE transactions on microwave theory and techniques 1991-03, Vol.39 (3), p.567-571 |
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creator | Moore, C.R. Trimble, W.C. Edwards, M.L. Sanderson, T.R. |
description | A three-stage GaAs MMIC distributed amplifier chip which was specially packaged in a two-chip, six-stage amplifier for cryogenic operation from 1 to 10 GHz is discussed. When immersed in liquid nitrogen, a fourfold reduction in amplifier noise is observed over the 4-GHz to 8-GHz frequency range. The cryogenic amplifier package is described, and the test configuration is explained. The reduction in amplifier noise is in agreement with the generally observed scaling with ambient temperature (in Kelvin) for discrete GaAs FET amplifiers.< > |
doi_str_mv | 10.1109/22.75303 |
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fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_miscellaneous_25151206</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>75303</ieee_id><sourcerecordid>25151206</sourcerecordid><originalsourceid>FETCH-LOGICAL-c336t-6a5abd6d0d43110d0991775d247298e7a14fd3d49bd72d649e1f55c5d3019d3c3</originalsourceid><addsrcrecordid>eNqN0E1LAzEQBuAgCtYqePWWk3jZms_NxltZtBZavOg5pMlEIrvdNdke-u9tXfGqp2GYh5fhReiakhmlRN8zNlOSE36CJlRKVehSkVM0IYRWhRYVOUcXOX8cViFJNUEPddp377CNDveQQpdau3WAu4AtXth5xuv1ssY-5iHFzW4Aj23bNzFESJfoLNgmw9XPnKK3p8fX-rlYvSyW9XxVOM7LoSittBtfeuIFP3zoidZUKemZUExXoCwVwXMv9MYr5kuhgQYpnfScUO2541N0O-b2qfvcQR5MG7ODprFb6HbZsIqJikvxN5RUUkbK_0ChOTvCuxG61OWcIJg-xdamvaHEHOs2jJnvug_0ZqQRAH7ZePsC6ot3cQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>25149326</pqid></control><display><type>article</type><title>Cryogenic performance of a GaAs MMIC distributed amplifier</title><source>IEEE Electronic Library (IEL)</source><creator>Moore, C.R. ; Trimble, W.C. ; Edwards, M.L. ; Sanderson, T.R.</creator><creatorcontrib>Moore, C.R. ; Trimble, W.C. ; Edwards, M.L. ; Sanderson, T.R.</creatorcontrib><description>A three-stage GaAs MMIC distributed amplifier chip which was specially packaged in a two-chip, six-stage amplifier for cryogenic operation from 1 to 10 GHz is discussed. When immersed in liquid nitrogen, a fourfold reduction in amplifier noise is observed over the 4-GHz to 8-GHz frequency range. The cryogenic amplifier package is described, and the test configuration is explained. The reduction in amplifier noise is in agreement with the generally observed scaling with ambient temperature (in Kelvin) for discrete GaAs FET amplifiers.< ></description><identifier>ISSN: 0018-9480</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/22.75303</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>IEEE</publisher><subject>Cryogenics ; Distributed amplifiers ; Frequency ; Gallium arsenide ; MMICs ; Nitrogen ; Noise reduction ; Operational amplifiers ; Packaging ; Testing</subject><ispartof>IEEE transactions on microwave theory and techniques, 1991-03, Vol.39 (3), p.567-571</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c336t-6a5abd6d0d43110d0991775d247298e7a14fd3d49bd72d649e1f55c5d3019d3c3</citedby><cites>FETCH-LOGICAL-c336t-6a5abd6d0d43110d0991775d247298e7a14fd3d49bd72d649e1f55c5d3019d3c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/75303$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>315,781,785,797,27929,27930,54763</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/75303$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Moore, C.R.</creatorcontrib><creatorcontrib>Trimble, W.C.</creatorcontrib><creatorcontrib>Edwards, M.L.</creatorcontrib><creatorcontrib>Sanderson, T.R.</creatorcontrib><title>Cryogenic performance of a GaAs MMIC distributed amplifier</title><title>IEEE transactions on microwave theory and techniques</title><addtitle>TMTT</addtitle><description>A three-stage GaAs MMIC distributed amplifier chip which was specially packaged in a two-chip, six-stage amplifier for cryogenic operation from 1 to 10 GHz is discussed. When immersed in liquid nitrogen, a fourfold reduction in amplifier noise is observed over the 4-GHz to 8-GHz frequency range. The cryogenic amplifier package is described, and the test configuration is explained. The reduction in amplifier noise is in agreement with the generally observed scaling with ambient temperature (in Kelvin) for discrete GaAs FET amplifiers.< ></description><subject>Cryogenics</subject><subject>Distributed amplifiers</subject><subject>Frequency</subject><subject>Gallium arsenide</subject><subject>MMICs</subject><subject>Nitrogen</subject><subject>Noise reduction</subject><subject>Operational amplifiers</subject><subject>Packaging</subject><subject>Testing</subject><issn>0018-9480</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1991</creationdate><recordtype>article</recordtype><recordid>eNqN0E1LAzEQBuAgCtYqePWWk3jZms_NxltZtBZavOg5pMlEIrvdNdke-u9tXfGqp2GYh5fhReiakhmlRN8zNlOSE36CJlRKVehSkVM0IYRWhRYVOUcXOX8cViFJNUEPddp377CNDveQQpdau3WAu4AtXth5xuv1ssY-5iHFzW4Aj23bNzFESJfoLNgmw9XPnKK3p8fX-rlYvSyW9XxVOM7LoSittBtfeuIFP3zoidZUKemZUExXoCwVwXMv9MYr5kuhgQYpnfScUO2541N0O-b2qfvcQR5MG7ODprFb6HbZsIqJikvxN5RUUkbK_0ChOTvCuxG61OWcIJg-xdamvaHEHOs2jJnvug_0ZqQRAH7ZePsC6ot3cQ</recordid><startdate>19910301</startdate><enddate>19910301</enddate><creator>Moore, C.R.</creator><creator>Trimble, W.C.</creator><creator>Edwards, M.L.</creator><creator>Sanderson, T.R.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7SP</scope></search><sort><creationdate>19910301</creationdate><title>Cryogenic performance of a GaAs MMIC distributed amplifier</title><author>Moore, C.R. ; Trimble, W.C. ; Edwards, M.L. ; Sanderson, T.R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c336t-6a5abd6d0d43110d0991775d247298e7a14fd3d49bd72d649e1f55c5d3019d3c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1991</creationdate><topic>Cryogenics</topic><topic>Distributed amplifiers</topic><topic>Frequency</topic><topic>Gallium arsenide</topic><topic>MMICs</topic><topic>Nitrogen</topic><topic>Noise reduction</topic><topic>Operational amplifiers</topic><topic>Packaging</topic><topic>Testing</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Moore, C.R.</creatorcontrib><creatorcontrib>Trimble, W.C.</creatorcontrib><creatorcontrib>Edwards, M.L.</creatorcontrib><creatorcontrib>Sanderson, T.R.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Electronics & Communications Abstracts</collection><jtitle>IEEE transactions on microwave theory and techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Moore, C.R.</au><au>Trimble, W.C.</au><au>Edwards, M.L.</au><au>Sanderson, T.R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Cryogenic performance of a GaAs MMIC distributed amplifier</atitle><jtitle>IEEE transactions on microwave theory and techniques</jtitle><stitle>TMTT</stitle><date>1991-03-01</date><risdate>1991</risdate><volume>39</volume><issue>3</issue><spage>567</spage><epage>571</epage><pages>567-571</pages><issn>0018-9480</issn><eissn>1557-9670</eissn><coden>IETMAB</coden><abstract>A three-stage GaAs MMIC distributed amplifier chip which was specially packaged in a two-chip, six-stage amplifier for cryogenic operation from 1 to 10 GHz is discussed. When immersed in liquid nitrogen, a fourfold reduction in amplifier noise is observed over the 4-GHz to 8-GHz frequency range. The cryogenic amplifier package is described, and the test configuration is explained. The reduction in amplifier noise is in agreement with the generally observed scaling with ambient temperature (in Kelvin) for discrete GaAs FET amplifiers.< ></abstract><pub>IEEE</pub><doi>10.1109/22.75303</doi><tpages>5</tpages></addata></record> |
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subjects | Cryogenics Distributed amplifiers Frequency Gallium arsenide MMICs Nitrogen Noise reduction Operational amplifiers Packaging Testing |
title | Cryogenic performance of a GaAs MMIC distributed amplifier |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-13T03%3A23%3A57IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Cryogenic%20performance%20of%20a%20GaAs%20MMIC%20distributed%20amplifier&rft.jtitle=IEEE%20transactions%20on%20microwave%20theory%20and%20techniques&rft.au=Moore,%20C.R.&rft.date=1991-03-01&rft.volume=39&rft.issue=3&rft.spage=567&rft.epage=571&rft.pages=567-571&rft.issn=0018-9480&rft.eissn=1557-9670&rft.coden=IETMAB&rft_id=info:doi/10.1109/22.75303&rft_dat=%3Cproquest_RIE%3E25151206%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=25149326&rft_id=info:pmid/&rft_ieee_id=75303&rfr_iscdi=true |